Abstract
A low voltage, room temperature electron emitter based on the GaN ultraviolet (UV) optoelectronic cathode is reported. It consists of an UV light emitting diode (LED) in direct contact with a photoemitter. The photons cause photoemission of electrons from the surface layer of low workfunction materials. The photoemitted electrons are collected by an anode or can be focused. Modulated electron emission is obtained by modulating the LED. A cold cathode design is introduced and the difficulties and limitations of this approach are discussed. An analysis method and design approach with a preferred material system that promises to achieve desirable characteristics are described.
| Original language | English (US) |
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| Title of host publication | Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC |
| Editors | Anon |
| Publisher | IEEE |
| Pages | 602-607 |
| Number of pages | 6 |
| State | Published - Dec 1 1997 |
| Event | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea Duration: Aug 17 1997 → Aug 21 1997 |
Other
| Other | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 |
|---|---|
| City | Kyongju, Korea |
| Period | 8/17/97 → 8/21/97 |