Gate current of modulation-doped field-effect transistors

P. P. Ruden, C. J. Han, M. Shur

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

We present a new room-temperature model for modulation-doped field-effect transistors and heterojunction insulated gate field-effect transistors that accounts for effects induced by the gate current at large gate voltages. For large gate currents the quasi-Fermi levels in the GaAs channel and the AlGaAs barrier layers are different because of the limited electron exchange imposed by the heterojunction band offset. As a consequence, the channel electron concentration for large gate voltages exceeds the value expected for the n-AlGaAs/GaAs material system in thermal equilibrium. The channel electron capacitance can have two peaks as a function of gate voltage leading to similar structure in the gate voltage dependence of the transconductance. We find good agreement between our calculated and measured gate currents as a function of the gate voltage.

Original languageEnglish (US)
Pages (from-to)1541-1546
Number of pages6
JournalJournal of Applied Physics
Volume64
Issue number3
DOIs
StatePublished - Dec 1 1988

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