Gate length and performance scaling of undoped-body extremely thin SOI MOSFETs

Amlan Majumdar, Xinlin Wang, Arvind Kumar, Judson R. Holt, David Dobuzinsky, Raj Venigalla, Christine Ouyang, Steven J. Koester, Wilfried Haensch

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

In this letter, we show that undoped-body extremely thin SOI (ETSOI) MOSFETs with SOI thickness in the 4-6-nm range have excellent short-channel control down to 20-25-nm gate lengths, suitable for the 22-nm technology node and beyond. We demonstrate that 6-nm-thin ETSOI devices can deliver high drive currents required for logic applications. Finally, we bring to fore the need for improvements in etch and doping processes to reduce series resistance of 4-nm-thin ETSOI devices in order to make them a viable option for the 15-nm technology node.

Original languageEnglish (US)
Pages (from-to)413-415
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number4
DOIs
StatePublished - Feb 26 2009

Keywords

  • CMOSFETs
  • Fully depleted SOI (FDSOI)

Fingerprint Dive into the research topics of 'Gate length and performance scaling of undoped-body extremely thin SOI MOSFETs'. Together they form a unique fingerprint.

Cite this