Abstract
The generation of nano-sized monodispersed single crystal silicon particles was examined by designing a system. It was found that the silicon particles were generated using a SiH 4/H 2 mixture in a high density plasma. The charged particles were injected into a high temperature annealing tube to be heated. It was concluded that single crystal particles were observed at low temperature anneals (300 °C).
Original language | English (US) |
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Pages (from-to) | 1923-1930 |
Number of pages | 8 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 22 |
Issue number | 4 |
DOIs | |
State | Published - Jul 2004 |