Geometry dependent tunnel FET performance - Dilemma of electrostatics vs. quantum confinement

Yeqing Lu, A. Seabaugh, P. Fay, S. J. Koester, S. E. Laux, T. W. Haensch, S. O. Koswatta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

25 Scopus citations

Abstract

Tunneling field-effect transistors (TFETs) are attracting a lot of interest because of their potential to reduce power dissipation in logic applications [1-3]. Performance of TFETs is expected to improve with increasing electrostatic control as provided by ultra-thin body (UTB) based single-gate (SG), double-gate (DG), and nanowire based gate-alI-around (GAA) structures, respectively (Fig. 1) [4]. Increasing geometrical confinement, however, could also lead to significant quantum confinement effects [4, 5], especially in III-V materials, which is detrimental to TFET performance. A previous study compared the operation ofI nAs based SG, DG, and GAA TFETs using quantum transport simulations [4]. Because of the use of the tight-binding model for the device structure in [4], however, the important tradeoff between electrostatics vs. quantum confmement in different geometries could not be clearly distinguished. In this work, we use detailed analytical calculations to compare the operation of SG, DG, and GAA TFETs in InAs (Fig. 1), and examine the competing effects of electrostatics vs. quantum confinement. We demonstrate an important tradeoff between the superior electrostatic control vs. current injection efficiency in TFETs with increasing lateral confinement, which will be an essential consideration for future TFET design.

Original languageEnglish (US)
Title of host publication68th Device Research Conference, DRC 2010
Pages17-18
Number of pages2
DOIs
StatePublished - Oct 11 2010
Event68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States
Duration: Jun 21 2010Jun 23 2010

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other68th Device Research Conference, DRC 2010
CountryUnited States
CityNotre Dame, IN
Period6/21/106/23/10

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