Abstract
We present a theoretical and experimental study of the frequency response of the photothermal effect in silicon waveguides. The effect is studied for modulation frequencies up to 3 GHz using integrated photonic circuits in Mach-Zehnder and ring oscillator configurations. The thermal behavior of silicon waveguides is described by a diffusive substrate heating model. In the low-frequency regime, the frequency response follows a -log (f) dependence, while a f-1/2 dependence is found in the high-frequency regime. Close agreement between theory and experiment allows for the accurate extraction of the photothermal absorption coefficient.
Original language | English (US) |
---|---|
Article number | 213106 |
Journal | Applied Physics Letters |
Volume | 93 |
Issue number | 21 |
DOIs | |
State | Published - 2008 |
Bibliographical note
Funding Information:W.H.P.P. acknowledges support from the Alexander-von-Humboldt foundation through a postdoctoral fellowship. H.X.T. acknowledges a young faculty startup grant from Yale University.