Gigahertz photothermal effect in silicon waveguides

W. H P Pernice, Mo Li, H. X. Tang

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Abstract

We present a theoretical and experimental study of the frequency response of the photothermal effect in silicon waveguides. The effect is studied for modulation frequencies up to 3 GHz using integrated photonic circuits in Mach-Zehnder and ring oscillator configurations. The thermal behavior of silicon waveguides is described by a diffusive substrate heating model. In the low-frequency regime, the frequency response follows a -log (f) dependence, while a f-1/2 dependence is found in the high-frequency regime. Close agreement between theory and experiment allows for the accurate extraction of the photothermal absorption coefficient.

Original languageEnglish (US)
Article number213106
JournalApplied Physics Letters
Volume93
Issue number21
DOIs
StatePublished - Dec 8 2008

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