Gigahertz photothermal effect in silicon waveguides

W. H P Pernice, Mo Li, H. X. Tang

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We present a theoretical and experimental study of the frequency response of the photothermal effect in silicon waveguides. The effect is studied for modulation frequencies up to 3 GHz using integrated photonic circuits in Mach-Zehnder and ring oscillator configurations. The thermal behavior of silicon waveguides is described by a diffusive substrate heating model. In the low-frequency regime, the frequency response follows a -log (f) dependence, while a f-1/2 dependence is found in the high-frequency regime. Close agreement between theory and experiment allows for the accurate extraction of the photothermal absorption coefficient.

Original languageEnglish (US)
Article number213106
JournalApplied Physics Letters
Issue number21
StatePublished - Dec 8 2008

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