Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

Tiezhong Ma, Stephen A. Campbell, Ryan Smith, Noel Hoilien, Boyong He, Wayne L. Gladfelter, Christopher Hobbs, Doug Buchanan, Charles Taylor, Michael Gribelyuk, Mike Tiner, Matthew Coppel, Jang Jung Lee

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

The electrical performance of column IVB metal oxide thin films deposited from their respective anhydrous metal nitrate-precursors show significant differences. Titanium dioxide has a high permittivity, but shows a large positive fixed charge and low inversion layer mobility. The amorphous interfacial layer is compositionally graded and contains a high concentration of Si-Ti bonds. In contrast, ZrO2 and HfO2 form well defined oxynitride interfacial layers and a good interface with silicon with much less fixed charge. The electron inversion layer mobility for an HfO2/SiOxNy/Si stack appears comparable to that of a conventional SiO2/Si interface.

Original languageEnglish (US)
Pages (from-to)2348-2356
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume48
Issue number10
DOIs
StatePublished - Oct 2001

Bibliographical note

Funding Information:
His graduate research focused on the role of precursor chemistry in the development of microstructure in CVD aluminum and titanium dioxide thin films. He is currently a National Research Council Postdoctoral Associate at the National Institute of Standards and Technology (NIST), Gaithersburg, MD. His current research interests are in the field of chemical sensing and microsensor design.

Funding Information:
Manuscript received November 16, 2000; revised June 19, 2001. This work was supported by Motorola, Texas Instruments, IBM, the Semiconductor Research Corporation Research Customization Program under Contracts 479 and 731, and an SRC Fellowship. The review of this paper was arranged by Editor C.-Y. Lu.

Keywords

  • CVD
  • Ceramics
  • Dielectric films
  • Hafnium compounds
  • Insulated gate FETs
  • MIS devices
  • Titanium compounds
  • Zirconium compounds

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