Growth conditions of c-axis normal Y1Ba2Cu3O7-δ films on 20° tilted crystalline substrates

Jun Ho Kim; Sanghyun Oh; Dojun Youm

doi:10.1016/S0040-6090(97)00145-4

Growth conditions of c-axis normal Y₁Ba₂Cu₃O_7-δ films on 20° tilted crystalline substrates

Jun Ho Kim, Sanghyun Oh, Dojun Youm

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Growth conditions of Y₁Ba₂Cu₃O_7-δ (YBCO) films on substrates whose crystalline axes were tilted by 20° with respect to their surfaces were investigated. Yttria-stabilized zirconia (YSZ) and CeO₂ were deposited for buffer layers. The important parameters for c-axis normal and in-plane axes aligned growth of YBCO overlayer were the thickness of the buffer layer and deposition temperature. High quality YBCO film was obtained with the optimized values of these parameters.

Original language	English (US)
Pages (from-to)	304-308
Number of pages	5
Journal	Thin Solid Films
Volume	305
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(97)00145-4
State	Published - Aug 1997

Keywords

Epitaxy
Growth mechanism
Superconductivity
X-ray diffraction

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title = "Growth conditions of c-axis normal Y1Ba2Cu3O7-δ films on 20° tilted crystalline substrates",

abstract = "Growth conditions of Y1Ba2Cu3O7-δ (YBCO) films on substrates whose crystalline axes were tilted by 20° with respect to their surfaces were investigated. Yttria-stabilized zirconia (YSZ) and CeO2 were deposited for buffer layers. The important parameters for c-axis normal and in-plane axes aligned growth of YBCO overlayer were the thickness of the buffer layer and deposition temperature. High quality YBCO film was obtained with the optimized values of these parameters.",

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AU - Oh, Sanghyun

AU - Youm, Dojun

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AB - Growth conditions of Y1Ba2Cu3O7-δ (YBCO) films on substrates whose crystalline axes were tilted by 20° with respect to their surfaces were investigated. Yttria-stabilized zirconia (YSZ) and CeO2 were deposited for buffer layers. The important parameters for c-axis normal and in-plane axes aligned growth of YBCO overlayer were the thickness of the buffer layer and deposition temperature. High quality YBCO film was obtained with the optimized values of these parameters.

KW - Epitaxy

KW - Growth mechanism

KW - Superconductivity

KW - X-ray diffraction

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