Abstract
We demonstrate the growth of α-Si 3N 4 nanowires with GaN branching on a (100) Si substrate via metal-organic chemical vapor deposition. Transmission electron microscopy and energy disperse spectroscopy results reveal that the well-aligned Si 3N 4 nanowires are grown on a (100) Si substrate, and GaN branches are epitaxially formed on the side walls of Si 3N 4 nanowires. The possible growth mechanism of Si 3N 4 nanowires was attributed to the melt-back phenomenon originating from the reaction of Ga-metal and Si substrates.
Original language | English (US) |
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Pages (from-to) | 106-108 |
Number of pages | 3 |
Journal | Materials Letters |
Volume | 76 |
DOIs | |
State | Published - Jun 1 2012 |
Bibliographical note
Funding Information:This research was supported by a research fund of Hanyang University (No. 2011-00000000229 ).
Keywords
- Branched nanowire
- GaN
- Nanowire
- Si N
- Synthesis methods