Growth of GaN branched α-Si 3N 4 nanowires on (100) Si by metal organic chemical vapor deposition

Jinsub Park, Dae Young Moon, Min Hwa Kim, Sung Hyun Park, Euijoon Yoon

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We demonstrate the growth of α-Si 3N 4 nanowires with GaN branching on a (100) Si substrate via metal-organic chemical vapor deposition. Transmission electron microscopy and energy disperse spectroscopy results reveal that the well-aligned Si 3N 4 nanowires are grown on a (100) Si substrate, and GaN branches are epitaxially formed on the side walls of Si 3N 4 nanowires. The possible growth mechanism of Si 3N 4 nanowires was attributed to the melt-back phenomenon originating from the reaction of Ga-metal and Si substrates.

Original languageEnglish (US)
Pages (from-to)106-108
Number of pages3
JournalMaterials Letters
StatePublished - Jun 1 2012

Bibliographical note

Funding Information:
This research was supported by a research fund of Hanyang University (No. 2011-00000000229 ).


  • Branched nanowire
  • GaN
  • Nanowire
  • Si N
  • Synthesis methods

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