Growth of GaN branched α-Si 3N 4 nanowires on (100) Si by metal organic chemical vapor deposition

Jinsub Park; Dae Young Moon; Min Hwa Kim; Sung Hyun Park; Euijoon Yoon

doi:10.1016/j.matlet.2012.02.061

Growth of GaN branched α-Si ₃N ₄ nanowires on (100) Si by metal organic chemical vapor deposition

Jinsub Park, Dae Young Moon, Min Hwa Kim, Sung Hyun Park, Euijoon Yoon

Mechanical Engineering

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2 Scopus citations

Abstract

We demonstrate the growth of α-Si ₃N ₄ nanowires with GaN branching on a (100) Si substrate via metal-organic chemical vapor deposition. Transmission electron microscopy and energy disperse spectroscopy results reveal that the well-aligned Si ₃N ₄ nanowires are grown on a (100) Si substrate, and GaN branches are epitaxially formed on the side walls of Si ₃N ₄ nanowires. The possible growth mechanism of Si ₃N ₄ nanowires was attributed to the melt-back phenomenon originating from the reaction of Ga-metal and Si substrates.

Original language	English (US)
Pages (from-to)	106-108
Number of pages	3
Journal	Materials Letters
Volume	76
DOIs	https://doi.org/10.1016/j.matlet.2012.02.061
State	Published - Jun 1 2012

Bibliographical note

Funding Information:
This research was supported by a research fund of Hanyang University (No. 2011-00000000229 ).

Keywords

Branched nanowire
GaN
Nanowire
Si N
Synthesis methods

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title = "Growth of GaN branched α-Si 3N 4 nanowires on (100) Si by metal organic chemical vapor deposition",

abstract = "We demonstrate the growth of α-Si 3N 4 nanowires with GaN branching on a (100) Si substrate via metal-organic chemical vapor deposition. Transmission electron microscopy and energy disperse spectroscopy results reveal that the well-aligned Si 3N 4 nanowires are grown on a (100) Si substrate, and GaN branches are epitaxially formed on the side walls of Si 3N 4 nanowires. The possible growth mechanism of Si 3N 4 nanowires was attributed to the melt-back phenomenon originating from the reaction of Ga-metal and Si substrates.",

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author = "Jinsub Park and Moon, {Dae Young} and Kim, {Min Hwa} and Park, {Sung Hyun} and Euijoon Yoon",

note = "Funding Information: This research was supported by a research fund of Hanyang University (No. 2011-00000000229 ).",

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T1 - Growth of GaN branched α-Si 3N 4 nanowires on (100) Si by metal organic chemical vapor deposition

AU - Park, Jinsub

AU - Moon, Dae Young

AU - Kim, Min Hwa

AU - Park, Sung Hyun

AU - Yoon, Euijoon

N1 - Funding Information: This research was supported by a research fund of Hanyang University (No. 2011-00000000229 ).

PY - 2012/6/1

Y1 - 2012/6/1

N2 - We demonstrate the growth of α-Si 3N 4 nanowires with GaN branching on a (100) Si substrate via metal-organic chemical vapor deposition. Transmission electron microscopy and energy disperse spectroscopy results reveal that the well-aligned Si 3N 4 nanowires are grown on a (100) Si substrate, and GaN branches are epitaxially formed on the side walls of Si 3N 4 nanowires. The possible growth mechanism of Si 3N 4 nanowires was attributed to the melt-back phenomenon originating from the reaction of Ga-metal and Si substrates.

AB - We demonstrate the growth of α-Si 3N 4 nanowires with GaN branching on a (100) Si substrate via metal-organic chemical vapor deposition. Transmission electron microscopy and energy disperse spectroscopy results reveal that the well-aligned Si 3N 4 nanowires are grown on a (100) Si substrate, and GaN branches are epitaxially formed on the side walls of Si 3N 4 nanowires. The possible growth mechanism of Si 3N 4 nanowires was attributed to the melt-back phenomenon originating from the reaction of Ga-metal and Si substrates.

KW - Branched nanowire

KW - GaN

KW - Nanowire

KW - Si N

KW - Synthesis methods

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