Growth Parameters of Fully Crystallized YIG, Bi:YIG, and Ce:YIG Films With High Faraday Rotations

Andrew D. Block; Prabesh Dulal; Bethanie J H Stadler; Nicholas C A Seaton

doi:10.1109/JPHOT.2013.2293610

Growth Parameters of Fully Crystallized YIG, Bi:YIG, and Ce:YIG Films With High Faraday Rotations

Andrew D. Block, Prabesh Dulal, Bethanie J H Stadler, Nicholas C A Seaton

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

We report on the growth of thin films of yttrium iron garnet (YIG) on dielectric substrates. Such films have historically been challenging to grow due to either cracking or incomplete crystallization of the films. We have established the proper growth parameters by tuning seed layer thickness to an optimum of 45 nm. These films were then used as seed layers for growth of films of Bi:YIG and Ce:YIG. Bi:YIG films show a Faraday rotation of 1700 °/cm, and Ce:YIG films show a Faraday rotation of 3700 °/cm.

Original language	English (US)
Article number	0600308
Journal	IEEE Photonics Journal
Volume	6
Issue number	1
DOIs	https://doi.org/10.1109/JPHOT.2013.2293610
State	Published - Feb 1 2014

Bibliographical note

Funding Information:
Parts of this work were carried out in the Characterization Facility, University of Minnesota, and other parts of this work were completed in the Minnesota Nanofabrication Center, a member of the NNIN.

Publisher Copyright:
© 2009-2012 IEEE.

Keywords

Faraday effect
Garnet
magneto-optics

Access

10.1109/JPHOT.2013.2293610

OpenUrl availability

Full text

Cite this

@article{a62abd84c2164ca3864cdce846d31ec6,

title = "Growth Parameters of Fully Crystallized YIG, Bi:YIG, and Ce:YIG Films With High Faraday Rotations",

abstract = "We report on the growth of thin films of yttrium iron garnet (YIG) on dielectric substrates. Such films have historically been challenging to grow due to either cracking or incomplete crystallization of the films. We have established the proper growth parameters by tuning seed layer thickness to an optimum of 45 nm. These films were then used as seed layers for growth of films of Bi:YIG and Ce:YIG. Bi:YIG films show a Faraday rotation of 1700 °/cm, and Ce:YIG films show a Faraday rotation of 3700 °/cm.",

keywords = "Faraday effect, Garnet, magneto-optics",

author = "Block, {Andrew D.} and Prabesh Dulal and Stadler, {Bethanie J H} and Seaton, {Nicholas C A}",

note = "Funding Information: Parts of this work were carried out in the Characterization Facility, University of Minnesota, and other parts of this work were completed in the Minnesota Nanofabrication Center, a member of the NNIN. Publisher Copyright: {\textcopyright} 2009-2012 IEEE.",

year = "2014",

month = feb,

day = "1",

doi = "10.1109/JPHOT.2013.2293610",

language = "English (US)",

volume = "6",

journal = "IEEE Photonics Journal",

issn = "1943-0655",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Growth Parameters of Fully Crystallized YIG, Bi:YIG, and Ce:YIG Films With High Faraday Rotations

AU - Block, Andrew D.

AU - Dulal, Prabesh

AU - Stadler, Bethanie J H

AU - Seaton, Nicholas C A

N1 - Funding Information: Parts of this work were carried out in the Characterization Facility, University of Minnesota, and other parts of this work were completed in the Minnesota Nanofabrication Center, a member of the NNIN. Publisher Copyright: © 2009-2012 IEEE.

PY - 2014/2/1

Y1 - 2014/2/1

N2 - We report on the growth of thin films of yttrium iron garnet (YIG) on dielectric substrates. Such films have historically been challenging to grow due to either cracking or incomplete crystallization of the films. We have established the proper growth parameters by tuning seed layer thickness to an optimum of 45 nm. These films were then used as seed layers for growth of films of Bi:YIG and Ce:YIG. Bi:YIG films show a Faraday rotation of 1700 °/cm, and Ce:YIG films show a Faraday rotation of 3700 °/cm.

AB - We report on the growth of thin films of yttrium iron garnet (YIG) on dielectric substrates. Such films have historically been challenging to grow due to either cracking or incomplete crystallization of the films. We have established the proper growth parameters by tuning seed layer thickness to an optimum of 45 nm. These films were then used as seed layers for growth of films of Bi:YIG and Ce:YIG. Bi:YIG films show a Faraday rotation of 1700 °/cm, and Ce:YIG films show a Faraday rotation of 3700 °/cm.

KW - Faraday effect

KW - Garnet

KW - magneto-optics

UR - http://www.scopus.com/inward/record.url?scp=84951872280&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84951872280&partnerID=8YFLogxK

U2 - 10.1109/JPHOT.2013.2293610

DO - 10.1109/JPHOT.2013.2293610

M3 - Article

AN - SCOPUS:84951872280

SN - 1943-0655

VL - 6

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

IS - 1

M1 - 0600308

ER -

Growth Parameters of Fully Crystallized YIG, Bi:YIG, and Ce:YIG Films With High Faraday Rotations

Abstract

Bibliographical note

Keywords

Access

OpenUrl availability

Other files and links

Fingerprint

Cite this