Growth temperature controlled magnetism in molecular beam epitaxially grown Ni2MnAl Heusler alloy

X. Y. Dong; J. W. Dong; J. Q. Xie; T. C. Shih; S. McKernan; C. Leighton; C. J. Palmstrøm

doi:10.1016/S0022-0248(03)01172-2

Growth temperature controlled magnetism in molecular beam epitaxially grown Ni₂MnAl Heusler alloy

X. Y. Dong, J. W. Dong, J. Q. Xie, T. C. Shih, S. McKernan, C. Leighton, C. J. Palmstrøm

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Single crystal Heusler alloy Ni₂MnAl thin films have been grown by molecular beam epitaxy on GaAs (0 0 1) using Sc_0.3Er_0.7As interlayers. The effect of growth temperature on the structural and magnetic properties was studied. Films grown at lower temperatures were non-ferromagnetic with a B2-like crystal structure; while higher growth temperature (400 °C) resulted in ferromagnetic films suggesting a L2₁-like structure. Exchange bias was detected in Ni₂MnAl/Ni₂MnGe (ferromagnetic) and Co/Ni₂MnAl bilayers, suggesting that the Ni₂MnAl films grown at 180 °C (in the B2-like structure) are antiferromagnetically ordered.

Original language	English (US)
Pages (from-to)	384-389
Number of pages	6
Journal	Journal of Crystal Growth
Volume	254
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(03)01172-2
State	Published - Jul 1 2003

Keywords

A3. Molecular beam epitaxy
B1. Alloys
B2. Magnetic materials

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10.1016/S0022-0248(03)01172-2

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title = "Growth temperature controlled magnetism in molecular beam epitaxially grown Ni2MnAl Heusler alloy",

abstract = "Single crystal Heusler alloy Ni2MnAl thin films have been grown by molecular beam epitaxy on GaAs (0 0 1) using Sc0.3Er0.7As interlayers. The effect of growth temperature on the structural and magnetic properties was studied. Films grown at lower temperatures were non-ferromagnetic with a B2-like crystal structure; while higher growth temperature (400 °C) resulted in ferromagnetic films suggesting a L21-like structure. Exchange bias was detected in Ni2MnAl/Ni2MnGe (ferromagnetic) and Co/Ni2MnAl bilayers, suggesting that the Ni2MnAl films grown at 180 °C (in the B2-like structure) are antiferromagnetically ordered.",

keywords = "A3. Molecular beam epitaxy, B1. Alloys, B2. Magnetic materials",

author = "Dong, {X. Y.} and Dong, {J. W.} and Xie, {J. Q.} and Shih, {T. C.} and S. McKernan and C. Leighton and Palmstr{\o}m, {C. J.}",

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T1 - Growth temperature controlled magnetism in molecular beam epitaxially grown Ni2MnAl Heusler alloy

AU - Dong, X. Y.

AU - Dong, J. W.

AU - Xie, J. Q.

AU - Shih, T. C.

AU - McKernan, S.

AU - Leighton, C.

AU - Palmstrøm, C. J.

PY - 2003/7/1

Y1 - 2003/7/1

N2 - Single crystal Heusler alloy Ni2MnAl thin films have been grown by molecular beam epitaxy on GaAs (0 0 1) using Sc0.3Er0.7As interlayers. The effect of growth temperature on the structural and magnetic properties was studied. Films grown at lower temperatures were non-ferromagnetic with a B2-like crystal structure; while higher growth temperature (400 °C) resulted in ferromagnetic films suggesting a L21-like structure. Exchange bias was detected in Ni2MnAl/Ni2MnGe (ferromagnetic) and Co/Ni2MnAl bilayers, suggesting that the Ni2MnAl films grown at 180 °C (in the B2-like structure) are antiferromagnetically ordered.

AB - Single crystal Heusler alloy Ni2MnAl thin films have been grown by molecular beam epitaxy on GaAs (0 0 1) using Sc0.3Er0.7As interlayers. The effect of growth temperature on the structural and magnetic properties was studied. Films grown at lower temperatures were non-ferromagnetic with a B2-like crystal structure; while higher growth temperature (400 °C) resulted in ferromagnetic films suggesting a L21-like structure. Exchange bias was detected in Ni2MnAl/Ni2MnGe (ferromagnetic) and Co/Ni2MnAl bilayers, suggesting that the Ni2MnAl films grown at 180 °C (in the B2-like structure) are antiferromagnetically ordered.

KW - A3. Molecular beam epitaxy

KW - B1. Alloys

KW - B2. Magnetic materials

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