Growth temperature controlled magnetism in molecular beam epitaxially grown Ni2MnAl Heusler alloy

X. Y. Dong, J. W. Dong, J. Q. Xie, T. C. Shih, S. McKernan, C. Leighton, C. J. Palmstrøm

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


Single crystal Heusler alloy Ni2MnAl thin films have been grown by molecular beam epitaxy on GaAs (0 0 1) using Sc0.3Er0.7As interlayers. The effect of growth temperature on the structural and magnetic properties was studied. Films grown at lower temperatures were non-ferromagnetic with a B2-like crystal structure; while higher growth temperature (400 °C) resulted in ferromagnetic films suggesting a L21-like structure. Exchange bias was detected in Ni2MnAl/Ni2MnGe (ferromagnetic) and Co/Ni2MnAl bilayers, suggesting that the Ni2MnAl films grown at 180 °C (in the B2-like structure) are antiferromagnetically ordered.

Original languageEnglish (US)
Pages (from-to)384-389
Number of pages6
JournalJournal of Crystal Growth
Issue number3-4
StatePublished - Jul 1 2003


  • A3. Molecular beam epitaxy
  • B1. Alloys
  • B2. Magnetic materials

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