Hafnium titanate as a high-k gate insulator

F. Chen, M. Li, V. Afanasev, W. L. Gladfelter, S. A. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Hf xTi 1-xO 2 films have been deposited by chemical vapor deposition. The permittivity of the film depends on the composition, but films with a permittivity of approximately 50 have been obtained. The films do not appear to undergo phase separation up to at least 1000°C. The interface properties and charge trapping appear to depend on composition. For films with approximately equal Hf and Ti concentration, transistor characteristics and inversion layer mobilities appear to be roughly comparable to those obtained when using pure HfO 2, however the films in this report had thick interfacial layers, which may affect the transistor properties.

Original languageEnglish (US)
Title of host publicationAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
EditorsM.C. Ozturk, L.J. Chen, P.J. Timans, F. Roozeboom, E.P. Gusev
Pages278-285
Number of pages8
Volume1
StatePublished - Oct 28 2004
EventAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
Duration: May 10 2004May 12 2004

Other

OtherAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
CountryUnited States
CitySan Antonio, TX
Period5/10/045/12/04

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