Abstract
Hf xTi 1-xO 2 films have been deposited by chemical vapor deposition. The permittivity of the film depends on the composition, but films with a permittivity of approximately 50 have been obtained. The films do not appear to undergo phase separation up to at least 1000°C. The interface properties and charge trapping appear to depend on composition. For films with approximately equal Hf and Ti concentration, transistor characteristics and inversion layer mobilities appear to be roughly comparable to those obtained when using pure HfO 2, however the films in this report had thick interfacial layers, which may affect the transistor properties.
Original language | English (US) |
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Title of host publication | Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium |
Editors | M.C. Ozturk, L.J. Chen, P.J. Timans, F. Roozeboom, E.P. Gusev |
Pages | 278-285 |
Number of pages | 8 |
Volume | 1 |
State | Published - Oct 28 2004 |
Event | Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: May 10 2004 → May 12 2004 |
Other
Other | Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium |
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Country/Territory | United States |
City | San Antonio, TX |
Period | 5/10/04 → 5/12/04 |