Heteroepitaxy and the performance of CIGS solar cells

Sang Ho Song, Stephen A. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

The preferred orientation of CIGS is related to the crystal structure of the bottom MoSe2 layer. The lattice mismatch of chalcopyrite (220) CIGS to hexagonal (102) MoSe2 is lower than other orientations. The lattice mismatch depends on the Ga composition x, reaching a minimum at x=0.35. 2D dislocation and trap densities were calculated as a function of lattice mismatch for various compositions. In good agreement with experiment, the best performance CIGS solar cell was obtained at x=0.35 in this numerical device simulation. The lattice mismatch between CIGS and hexagonal CdS can also lead to 2D dislocations in CdS at the top CIGS interface. Interface traps saturate the open circuit voltage at high Ga composition by a thermionic emission transport mechanism. These models well explain observed CIGS solar cell performance over the full range of Ga compositions.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2534-2539
Number of pages6
ISBN (Print)9781479932993
DOIs
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/TerritoryUnited States
CityTampa, FL
Period6/16/136/21/13

Keywords

  • CIGS
  • CdS
  • Device simulation
  • Dislocation spacing
  • Heteroepitaxy
  • Lattice mismatch

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