Heterostructure FET Model Including Gate Leakage

P. Paul Ruden

doi:10.1109/16.59919

Heterostructure FET Model Including Gate Leakage

P. Paul Ruden

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A new, analytical model for heterostructure field effect transistors is presented. The model is in the framework of the gradual channel approximation and includes the effects of gate leakage, velocity saturation, and subthreshold conduction. The consideration of gate leakage makes this model particularly useful for application to enhancement-mode devices.

Original language	English (US)
Pages (from-to)	2267-2270
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	37
Issue number	10
DOIs	https://doi.org/10.1109/16.59919
State	Published - Oct 1990
Externally published	Yes

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title = "Heterostructure FET Model Including Gate Leakage",

abstract = "A new, analytical model for heterostructure field effect transistors is presented. The model is in the framework of the gradual channel approximation and includes the effects of gate leakage, velocity saturation, and subthreshold conduction. The consideration of gate leakage makes this model particularly useful for application to enhancement-mode devices.",

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Heterostructure FET Model Including Gate Leakage

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