Hexagonal growth spirals on GaN grown by molecular-beam epitaxy: Kinetics versus thermodynamics

A. Parkhomovsky; A. M. Dabiran; B. Benjaminsson; P. I. Cohen

doi:10.1063/1.1361278

Hexagonal growth spirals on GaN grown by molecular-beam epitaxy: Kinetics versus thermodynamics

A. Parkhomovsky, A. M. Dabiran, B. Benjaminsson, P. I. Cohen

Electrical and Computer Engineering

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Abstract

GaN grown by molecular-beam epitaxy on Ga-polar GaN templates prepared by metal organic chemical vapor deposition shows a variety of morphologies that depend on defects and growth conditions. We measured the mean terrace widths of hexagonal growth spirals or hillocks versus ammonia and Ga fluxes and substrate temperature. The measurements were compared to a near equilibrium model of the growth. The results indicate that under excess Ga growth conditions, Ga-polar GaN(0001) has a mean step-edge energy of 0.27 eV/A.

Original language	English (US)
Pages (from-to)	2315-2317
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	16
DOIs	https://doi.org/10.1063/1.1361278
State	Published - Apr 16 2001

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abstract = "GaN grown by molecular-beam epitaxy on Ga-polar GaN templates prepared by metal organic chemical vapor deposition shows a variety of morphologies that depend on defects and growth conditions. We measured the mean terrace widths of hexagonal growth spirals or hillocks versus ammonia and Ga fluxes and substrate temperature. The measurements were compared to a near equilibrium model of the growth. The results indicate that under excess Ga growth conditions, Ga-polar GaN(0001) has a mean step-edge energy of 0.27 eV/A.",

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T1 - Hexagonal growth spirals on GaN grown by molecular-beam epitaxy

T2 - Kinetics versus thermodynamics

AU - Parkhomovsky, A.

AU - Dabiran, A. M.

AU - Benjaminsson, B.

AU - Cohen, P. I.

PY - 2001/4/16

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AB - GaN grown by molecular-beam epitaxy on Ga-polar GaN templates prepared by metal organic chemical vapor deposition shows a variety of morphologies that depend on defects and growth conditions. We measured the mean terrace widths of hexagonal growth spirals or hillocks versus ammonia and Ga fluxes and substrate temperature. The measurements were compared to a near equilibrium model of the growth. The results indicate that under excess Ga growth conditions, Ga-polar GaN(0001) has a mean step-edge energy of 0.27 eV/A.

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Hexagonal growth spirals on GaN grown by molecular-beam epitaxy: Kinetics versus thermodynamics

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