HfO2-based insulating stacks on 4H-SiC(0001)

V. V. Afanas'ev, A. Stesmans, F. Chen, S. A. Campbell, R. Smith

Research output: Contribution to journalArticlepeer-review

80 Scopus citations

Abstract

The deposition of HfO2-based insulating stacks on 4H-SiC(0001) was demonstrated. The stack combined the high dielectric permittivity of HfO2 with the high quality of the ultrathin SiO2/SiC interface and associated high energy barriers for electron and hole injection from SiC. The high dielectric permittivity of HfO2 allowed the application of high electric fields to the Sic surface, while keeping the strength of the field in the insulator at a moderate level.

Original languageEnglish (US)
Pages (from-to)922-924
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number6
DOIs
StatePublished - Feb 10 2003

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