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Systematic analysis of the planar resistivity, Hall effect, and cotangent of the Hall angle for the electron-doped cuprates reveals underlying Fermi-liquid behavior even deep in the antiferromagnetic part of the phase diagram. The transport scattering rate exhibits a quadratic temperature dependence, and is nearly independent of doping and compound and carrier type (electrons versus holes), and hence is universal. Our analysis moreover indicates that the material-specific resistivity upturn at low temperatures and low doping has the same origin in both electron- and hole-doped cuprates.
Bibliographical noteFunding Information:
This work was supported partially by the NSF through the University of Minnesota MRSEC under Grant No. DMR-1420013, and by NSF Grant No. 1006617. The work at the TU Wien was supported by FWF Project No. P27980-N36.
How much support was provided by MRSEC?
Reporting period for MRSEC
- Period 3
PubMed: MeSH publication types
- Journal Article