High chi block copolymer DSA to improve pattern quality for FinFET device fabrication

Hsinyu Tsai; Hiroyuki Miyazoe; Ankit Vora; Teddie Magbitang; Noel Arellano; Chi Chun Liu; Michael J. Maher; William J. Durand; Simon J. Dawes; James J. Bucchignano; Lynne Gignac; Daniel P. Sanders; Eric A. Joseph; Matthew E. Colburn; C. Grant Willson; Christopher J. Ellison; Michael A. Guillorn

doi:10.1117/12.2219544

High chi block copolymer DSA to improve pattern quality for FinFET device fabrication

Hsinyu Tsai, Hiroyuki Miyazoe, Ankit Vora, Teddie Magbitang, Noel Arellano, Chi Chun Liu, Michael J. Maher, William J. Durand, Simon J. Dawes, James J. Bucchignano, Lynne Gignac, Daniel P. Sanders, Eric A. Joseph, Matthew E. Colburn, C. Grant Willson, Christopher J. Ellison, Michael A. Guillorn

Chemical Engineering and Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

21 Scopus citations

Abstract

Directed self-assembly (DSA) with block-copolymers (BCP) is a promising lithography extension technique to scale below 30nm pitch with 193i lithography. Continued scaling toward 20nm pitch or below will require material system improvements from PS-b-PMMA. Pattern quality for DSA features, such as line edge roughness (LER), line width roughness (LWR), size uniformity, and placement, is key to DSA manufacturability. In this work, we demonstrate finFET devices fabricated with DSA-patterned fins and compare several BCP systems for continued pitch scaling. Organic-organic high chi BCPs at 24nm and 21nm pitches show improved low to mid-frequency LER/LWR after pattern transfer.

Original language	English (US)
Title of host publication	Advances in Patterning Materials and Processes XXXIII
Editors	Todd R. Younkin, Christoph K. Hohle
Publisher	SPIE
ISBN (Electronic)	9781510600140
DOIs	https://doi.org/10.1117/12.2219544
State	Published - Jan 1 2016
Event	Advances in Patterning Materials and Processes XXXIII - San Jose, United States Duration: Feb 22 2016 → Feb 25 2016

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9779
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	Advances in Patterning Materials and Processes XXXIII
Country/Territory	United States
City	San Jose
Period	2/22/16 → 2/25/16

Keywords

Directed self assembly
FinFET device
Grapho-epitaxy
High chi BCP
PS-PMMA
Pitch scaling

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Tsai, H., Miyazoe, H., Vora, A., Magbitang, T., Arellano, N., Liu, C. C., Maher, M. J., Durand, W. J., Dawes, S. J., Bucchignano, J. J., Gignac, L., Sanders, D. P., Joseph, E. A., Colburn, M. E., Willson, C. G., Ellison, C. J., & Guillorn, M. A. (2016). High chi block copolymer DSA to improve pattern quality for FinFET device fabrication. In T. R. Younkin, & C. K. Hohle (Eds.), Advances in Patterning Materials and Processes XXXIII Article 977910 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9779). SPIE. https://doi.org/10.1117/12.2219544

High chi block copolymer DSA to improve pattern quality for FinFET device fabrication. / Tsai, Hsinyu; Miyazoe, Hiroyuki; Vora, Ankit et al.
Advances in Patterning Materials and Processes XXXIII. ed. / Todd R. Younkin; Christoph K. Hohle. SPIE, 2016. 977910 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9779).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsai, H, Miyazoe, H, Vora, A, Magbitang, T, Arellano, N, Liu, CC, Maher, MJ, Durand, WJ, Dawes, SJ, Bucchignano, JJ, Gignac, L, Sanders, DP, Joseph, EA, Colburn, ME, Willson, CG, Ellison, CJ & Guillorn, MA 2016, High chi block copolymer DSA to improve pattern quality for FinFET device fabrication. in TR Younkin & CK Hohle (eds), Advances in Patterning Materials and Processes XXXIII., 977910, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9779, SPIE, Advances in Patterning Materials and Processes XXXIII, San Jose, United States, 2/22/16. https://doi.org/10.1117/12.2219544

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abstract = "Directed self-assembly (DSA) with block-copolymers (BCP) is a promising lithography extension technique to scale below 30nm pitch with 193i lithography. Continued scaling toward 20nm pitch or below will require material system improvements from PS-b-PMMA. Pattern quality for DSA features, such as line edge roughness (LER), line width roughness (LWR), size uniformity, and placement, is key to DSA manufacturability. In this work, we demonstrate finFET devices fabricated with DSA-patterned fins and compare several BCP systems for continued pitch scaling. Organic-organic high chi BCPs at 24nm and 21nm pitches show improved low to mid-frequency LER/LWR after pattern transfer.",

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author = "Hsinyu Tsai and Hiroyuki Miyazoe and Ankit Vora and Teddie Magbitang and Noel Arellano and Liu, {Chi Chun} and Maher, {Michael J.} and Durand, {William J.} and Dawes, {Simon J.} and Bucchignano, {James J.} and Lynne Gignac and Sanders, {Daniel P.} and Joseph, {Eric A.} and Colburn, {Matthew E.} and Willson, {C. Grant} and Ellison, {Christopher J.} and Guillorn, {Michael A.}",

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AU - Miyazoe, Hiroyuki

AU - Vora, Ankit

AU - Magbitang, Teddie

AU - Arellano, Noel

AU - Liu, Chi Chun

AU - Maher, Michael J.

AU - Durand, William J.

AU - Dawes, Simon J.

AU - Bucchignano, James J.

AU - Gignac, Lynne

AU - Sanders, Daniel P.

AU - Joseph, Eric A.

AU - Colburn, Matthew E.

AU - Willson, C. Grant

AU - Ellison, Christopher J.

AU - Guillorn, Michael A.

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N2 - Directed self-assembly (DSA) with block-copolymers (BCP) is a promising lithography extension technique to scale below 30nm pitch with 193i lithography. Continued scaling toward 20nm pitch or below will require material system improvements from PS-b-PMMA. Pattern quality for DSA features, such as line edge roughness (LER), line width roughness (LWR), size uniformity, and placement, is key to DSA manufacturability. In this work, we demonstrate finFET devices fabricated with DSA-patterned fins and compare several BCP systems for continued pitch scaling. Organic-organic high chi BCPs at 24nm and 21nm pitches show improved low to mid-frequency LER/LWR after pattern transfer.

AB - Directed self-assembly (DSA) with block-copolymers (BCP) is a promising lithography extension technique to scale below 30nm pitch with 193i lithography. Continued scaling toward 20nm pitch or below will require material system improvements from PS-b-PMMA. Pattern quality for DSA features, such as line edge roughness (LER), line width roughness (LWR), size uniformity, and placement, is key to DSA manufacturability. In this work, we demonstrate finFET devices fabricated with DSA-patterned fins and compare several BCP systems for continued pitch scaling. Organic-organic high chi BCPs at 24nm and 21nm pitches show improved low to mid-frequency LER/LWR after pattern transfer.

KW - Directed self assembly

KW - FinFET device

KW - Grapho-epitaxy

KW - High chi BCP

KW - PS-PMMA

KW - Pitch scaling

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ER -

High chi block copolymer DSA to improve pattern quality for FinFET device fabrication

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