High-efficiency, Ge-on-SOI lateral PIN photodiodes with 29 GHz bandwidth

S. J. Koester, J. D. Schaub, G. Dehlinger, J. O. Chu, Q. C. Ouyang, A. Grill

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations

Abstract

The lateral PIN photodetectors were fabricated using Ge films deposited on ultra-thin silicon-on-insulator (SOI) substrates. The starting material was produced by directly growing Ge on a thin SOI substrate with initial SOI thickness of 15 nm. Good agreement between theory and experiment was obtained, demonstrating the benefit of the SOI layer for limiting the Si and Ge interdiffusion during high-temperature thermal cyclic annealing (TCA) step. The bandwidth saturated at very low voltages, and even at zero bias, bandwidths as high as 20 GHz were achieved.

Original languageEnglish (US)
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages175-176
Number of pages2
DOIs
StatePublished - Dec 1 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: Jun 21 2004Jun 23 2004

Other

OtherDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period6/21/046/23/04

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