Abstract
The authors present high-frequency results of n-channel MODFETs fabricated on high-mobility Si/SiGe strained layer heterostructures grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). Devices with gate length Lg = 0.2μm and drain-source separation Lds = 0.9μm displayed unity current gain cutoff frequencies as high as fT = 45GHz (47GHz) at V2 = +0.6V (+1.5V). Similar devices with Lg = 0.2μm and Lds = 0.5μm produced values of fT= 61 GHz (62GHz) at Vds = +0.6V (+1.0V). The value fT = 62GHz is the highest unity current gain cutoff frequency reported to date for an n-channel strained Si MODFET.
Original language | English (US) |
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Pages (from-to) | 86-87 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 35 |
Issue number | 1 |
DOIs | |
State | Published - Jan 7 1999 |
Externally published | Yes |