High mobility HfO2 n- and p-channel transistors

S. A. Campbell, T. Z. Ma, R. Smith, W. L. Gladfelter, F. Chen

Research output: Contribution to journalConference articlepeer-review

46 Scopus citations

Abstract

High permittivity HfO2 films have been deposited directly on silicon using the thermal decomposition of the hafnium nitrato precursor Hf(NO3)4. These films were then used to build n- and p-channel field effect transistors. N+ poly, P+ poly, and Pt have been used as gate electrodes. The mobility of the poly gate devices is comparable to that of SiO2/Si, however, these devices show a thicker equivalent oxide thickness than the Pt devices. The effect of the composition of the films on their electrical performance is discussed.

Original languageEnglish (US)
Pages (from-to)361-365
Number of pages5
JournalMicroelectronic Engineering
Volume59
Issue number1-4
DOIs
StatePublished - Nov 2001
Event12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy
Duration: Jun 20 2001Jun 23 2001

Bibliographical note

Funding Information:
The authors wish to acknowledge Motorola, who supported this work through the Semiconductor Research Corporation Research Customization Program (contract 731).

Keywords

  • Gate insulator
  • High permittivity
  • MOSFET
  • Mobility

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