High permittivity HfO2 films have been deposited directly on silicon using the thermal decomposition of the hafnium nitrato precursor Hf(NO3)4. These films were then used to build n- and p-channel field effect transistors. N+ poly, P+ poly, and Pt have been used as gate electrodes. The mobility of the poly gate devices is comparable to that of SiO2/Si, however, these devices show a thicker equivalent oxide thickness than the Pt devices. The effect of the composition of the films on their electrical performance is discussed.
|Original language||English (US)|
|Number of pages||5|
|State||Published - Nov 2001|
|Event||12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy|
Duration: Jun 20 2001 → Jun 23 2001
Bibliographical noteFunding Information:
The authors wish to acknowledge Motorola, who supported this work through the Semiconductor Research Corporation Research Customization Program (contract 731).
- Gate insulator
- High permittivity