High mobility HfO₂ n- and p-channel transistors

Engineering & Materials Science

• Transistors 100%
• Hafnium 61%
• Field effect transistors 41%
• Permittivity 39%
• Pyrolysis 36%
• Oxides 33%
• Silicon 30%
• Electrodes 29%
• Chemical analysis 25%

Chemical Compounds

• Compound Mobility 89%
• Liquid Film 56%
• Hafnium Atom 46%
• Permittivity 43%
• Field Effect 38%
• Pyrolysis 27%
• Oxide 21%
• Behavior as Electrode 19%

Physics & Astronomy

• transistors 93%
• hafnium 48%
• thermal decomposition 43%
• field effect transistors 30%
• permittivity 27%
• oxides 24%
• electrodes 24%
• silicon 21%
• performance 17%