High-performance 0.1μm gate-length Ge/Si0.4Ge0.6 p-channel MODFETs

R. Hammond, S. J. Koester, J. O. Chu

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5 Scopus citations

Abstract

Results are reported of high-transconductance p-channel MODFETs fabricated on Ge/Sio0.4Ge0.6 strained-layer heterostructures grown by UHV-CVD. Devices with 0.1 mm gate length were fabricated on compressively-strained pure-Ge channels with a Hall mobility of 1750cm2/Vs (30900cm2/Vs) at room temperature (T = 77K). These devices displayed room-temperature peak extrinsic transconductances as high as 317 mS/mm, at Vds = -0.6V, while the output conductance under the same bias conditions was only 18mS/mm, corresponding to a maximum voltage gain of 18. At T = 77K, peak extrinsic transconductances as high as 622 mS/mm were obtained at bias voltages as low as Vds = -0.2V. To our knowledge, the 77K transconductance is the highest ever reported for a p-type field effect transistor.

Original languageEnglish (US)
Pages (from-to)1590-1591
Number of pages2
JournalElectronics Letters
Volume35
Issue number18
DOIs
StatePublished - Sep 2 1999

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