Using jet-vapor-deposited silicon nitride as gate dielectric, self-aligned p-type SiGe metal-oxide-semiconductor modulated-doped field effect transistors are fabricated. For a 0.15 μm gate-length device, the gate leakage current is as low as 0.46 nA/μm at Vgs = 3 V and Vds = -50 mV. A maximum extrinsic transconductance of 305 mS/mm, a unity current gain cut-off frequency of 62 GHz, and a maximum oscillation frequency of 68 GHz are measured at low operating biases of Vds = -0.75 V and Vgs = 0.4 V.
|Original language||English (US)|
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - Dec 1 1999|
|Event||1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA|
Duration: Dec 5 1999 → Dec 8 1999