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We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.
Bibliographical noteFunding Information:
This work was supported by the National Science Foundation (NSF) through the University of Minnesota MRSEC under Award Number DMR-1420013.
- 2D materials
- black phosphorus
- crystal orientation
How much support was provided by MRSEC?
Reporting period for MRSEC
- Period 3
11/1/14 → …
Project: Research project