High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering

Nazila Haratipour, Seon Namgung, Roberto Grassi, Tony Low, Sang Hyun Oh, Steven J. Koester

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.

Original languageEnglish (US)
Article number7873224
Pages (from-to)685-688
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number5
DOIs
StatePublished - May 2017

Bibliographical note

Funding Information:
This work was supported by the National Science Foundation (NSF) through the University of Minnesota MRSEC under Award Number DMR-1420013.

Keywords

  • 2D materials
  • black phosphorus
  • crystal orientation
  • MOSFETs

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 3

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