High performance complementary logic based on GaAs/InGaAs/AlGaAs HIGFETs

P. P. Ruden; A. I. Akinwande; D. Narum; D. E. Grider; J. Nohava

High performance complementary logic based on GaAs/InGaAs/AlGaAs HIGFETs

P. P. Ruden, A. I. Akinwande, D. Narum, D. E. Grider, J. Nohava

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Results for planar, self-aligned gate, complementary, pseudomorphic GaAs-InGaAs-AlGaAs HIGFET devices are presented. The gate leakage is found to be controllable by increasing the AlAs molar fraction in the barrier layer. A planar n-doped layer beneath the InGaAs channel is shown to shift the threshold voltages of the devices and to reduce considerably the output conductance of the p-channel FET. The operation of complementary inverters depends sensitively on the relative values of supply voltage and gate turn-on voltages. Large inverter noise margins are demonstrated, and the power and speed of complementary ring oscillators are discussed.

Original language	English (US)
Pages (from-to)	117-120
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - Dec 1 1989
Event	1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA Duration: Dec 3 1989 → Dec 6 1989

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title = "High performance complementary logic based on GaAs/InGaAs/AlGaAs HIGFETs",

abstract = "Results for planar, self-aligned gate, complementary, pseudomorphic GaAs-InGaAs-AlGaAs HIGFET devices are presented. The gate leakage is found to be controllable by increasing the AlAs molar fraction in the barrier layer. A planar n-doped layer beneath the InGaAs channel is shown to shift the threshold voltages of the devices and to reduce considerably the output conductance of the p-channel FET. The operation of complementary inverters depends sensitively on the relative values of supply voltage and gate turn-on voltages. Large inverter noise margins are demonstrated, and the power and speed of complementary ring oscillators are discussed.",

author = "Ruden, {P. P.} and Akinwande, {A. I.} and D. Narum and Grider, {D. E.} and J. Nohava",

year = "1989",

month = dec,

day = "1",

language = "English (US)",

pages = "117--120",

journal = "Technical Digest - International Electron Devices Meeting",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1989 International Electron Devices Meeting - Technical Digest ; Conference date: 03-12-1989 Through 06-12-1989",

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TY - JOUR

T1 - High performance complementary logic based on GaAs/InGaAs/AlGaAs HIGFETs

AU - Ruden, P. P.

AU - Akinwande, A. I.

AU - Narum, D.

AU - Grider, D. E.

AU - Nohava, J.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - Results for planar, self-aligned gate, complementary, pseudomorphic GaAs-InGaAs-AlGaAs HIGFET devices are presented. The gate leakage is found to be controllable by increasing the AlAs molar fraction in the barrier layer. A planar n-doped layer beneath the InGaAs channel is shown to shift the threshold voltages of the devices and to reduce considerably the output conductance of the p-channel FET. The operation of complementary inverters depends sensitively on the relative values of supply voltage and gate turn-on voltages. Large inverter noise margins are demonstrated, and the power and speed of complementary ring oscillators are discussed.

AB - Results for planar, self-aligned gate, complementary, pseudomorphic GaAs-InGaAs-AlGaAs HIGFET devices are presented. The gate leakage is found to be controllable by increasing the AlAs molar fraction in the barrier layer. A planar n-doped layer beneath the InGaAs channel is shown to shift the threshold voltages of the devices and to reduce considerably the output conductance of the p-channel FET. The operation of complementary inverters depends sensitively on the relative values of supply voltage and gate turn-on voltages. Large inverter noise margins are demonstrated, and the power and speed of complementary ring oscillators are discussed.

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M3 - Conference article

AN - SCOPUS:0024895493

SN - 0163-1918

SP - 117

EP - 120

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1989 International Electron Devices Meeting - Technical Digest

Y2 - 3 December 1989 through 6 December 1989

ER -

High performance complementary logic based on GaAs/InGaAs/AlGaAs HIGFETs

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