High performance from ZnO multiple quantum-well green light emitting diode with Li-doped CdZnO active region

Sushil Kumar Pandey, Shruti Verma, Saurabh Kumar Pandey, Shaibal Mukherjee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A comprehensive theoretical study of Cd0.4Zn0.6O/ZnO multiple quantum-well (MQW) based light emitting diode (LED) is performed using a commercial TCAD simulation software. A device internal quantum efficiency (IQE) of 94% is achieved at room temperature from such LED that, emanates at 510 nm wavelength with a turn-on voltage of 3.1 V. The effects of thickness, doping, and alloy composition of various device constituent layers are comprehensively studied while optimizing the device performance at room temperature. It is also observed that electroluminescence (EL) intensity increased by a factor of 1.25 Li doping (doping concentration=1×10 18 cm3) of CdZnO well region, possibly due to the strain-induced piezoelectric polarization and spontaneous polarization reduction caused by Li ferroelectric dipole moment.

Original languageEnglish (US)
Title of host publication2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs
StatePublished - Nov 22 2012
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: Aug 20 2012Aug 23 2012

Other

Other2012 12th IEEE International Conference on Nanotechnology, NANO 2012
CountryUnited Kingdom
CityBirmingham
Period8/20/128/23/12

Keywords

  • CdZnO
  • Internal quantum efficiency
  • Light emitting diode
  • MgZnO
  • Polarization-induced Stark effect
  • ZnO

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