TY - GEN
T1 - High performance from ZnO multiple quantum-well green light emitting diode with Li-doped CdZnO active region
AU - Pandey, Sushil Kumar
AU - Verma, Shruti
AU - Pandey, Saurabh Kumar
AU - Mukherjee, Shaibal
PY - 2012
Y1 - 2012
N2 - A comprehensive theoretical study of Cd0.4Zn0.6O/ZnO multiple quantum-well (MQW) based light emitting diode (LED) is performed using a commercial TCAD simulation software. A device internal quantum efficiency (IQE) of 94% is achieved at room temperature from such LED that, emanates at 510 nm wavelength with a turn-on voltage of 3.1 V. The effects of thickness, doping, and alloy composition of various device constituent layers are comprehensively studied while optimizing the device performance at room temperature. It is also observed that electroluminescence (EL) intensity increased by a factor of 1.25 Li doping (doping concentration=1×10 18 cm3) of CdZnO well region, possibly due to the strain-induced piezoelectric polarization and spontaneous polarization reduction caused by Li ferroelectric dipole moment.
AB - A comprehensive theoretical study of Cd0.4Zn0.6O/ZnO multiple quantum-well (MQW) based light emitting diode (LED) is performed using a commercial TCAD simulation software. A device internal quantum efficiency (IQE) of 94% is achieved at room temperature from such LED that, emanates at 510 nm wavelength with a turn-on voltage of 3.1 V. The effects of thickness, doping, and alloy composition of various device constituent layers are comprehensively studied while optimizing the device performance at room temperature. It is also observed that electroluminescence (EL) intensity increased by a factor of 1.25 Li doping (doping concentration=1×10 18 cm3) of CdZnO well region, possibly due to the strain-induced piezoelectric polarization and spontaneous polarization reduction caused by Li ferroelectric dipole moment.
KW - CdZnO
KW - Internal quantum efficiency
KW - Light emitting diode
KW - MgZnO
KW - Polarization-induced Stark effect
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=84869194047&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84869194047&partnerID=8YFLogxK
U2 - 10.1109/NANO.2012.6321915
DO - 10.1109/NANO.2012.6321915
M3 - Conference contribution
AN - SCOPUS:84869194047
SN - 9781467321983
T3 - Proceedings of the IEEE Conference on Nanotechnology
BT - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
T2 - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Y2 - 20 August 2012 through 23 August 2012
ER -
