High-performance SiGe MODFET technology

S. J. Koester; J. O. Chu; K. L. Saenger; Q. C. Ouyang; J. A. Ott; D. F. Canaperi; J. A. Tornello; C. V. Jahnes; S. E. Steen

High-performance SiGe MODFET technology

S. J. Koester, J. O. Chu, K. L. Saenger, Q. C. Ouyang, J. A. Ott, D. F. Canaperi, J. A. Tornello, C. V. Jahnes, S. E. Steen

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

An overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO ₂ inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.

Original language	English (US)
Pages (from-to)	171-179
Number of pages	9
Journal	Materials Research Society Symposium Proceedings
Volume	809
State	Published - Dec 1 2004
Event	High-Mobility Group-IV Materials and Devices - San Francisco, CA, United States Duration: Apr 13 2004 → Apr 15 2004

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title = "High-performance SiGe MODFET technology",

abstract = "An overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO 2 inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.",

author = "Koester, {S. J.} and Chu, {J. O.} and Saenger, {K. L.} and Ouyang, {Q. C.} and Ott, {J. A.} and Canaperi, {D. F.} and Tornello, {J. A.} and Jahnes, {C. V.} and Steen, {S. E.}",

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TY - JOUR

T1 - High-performance SiGe MODFET technology

AU - Koester, S. J.

AU - Chu, J. O.

AU - Saenger, K. L.

AU - Ouyang, Q. C.

AU - Ott, J. A.

AU - Canaperi, D. F.

AU - Tornello, J. A.

AU - Jahnes, C. V.

AU - Steen, S. E.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - An overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO 2 inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.

AB - An overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO 2 inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.

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M3 - Conference article

AN - SCOPUS:12744267789

SN - 0272-9172

VL - 809

SP - 171

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JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - High-Mobility Group-IV Materials and Devices

Y2 - 13 April 2004 through 15 April 2004

ER -

High-performance SiGe MODFET technology

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