High-performance SiGe pMODFETs grown by UHV-CVD

S. J. Koester; R. Hammond; J. O. Chu; J. A. Ott; P. M. Mooney; L. Perraud; K. A. Jenkins

High-performance SiGe pMODFETs grown by UHV-CVD

S. J. Koester, R. Hammond, J. O. Chu, J. A. Ott, P. M. Mooney, L. Perraud, K. A. Jenkins

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

The fabrication and characterization of 0.1 μm-gate-length SiGe pMODFETs fabricated on UHV-CVD-grown heterostructures with various novel layer structure configurations are reported. We have fabricated Ge/Si_0.4Ge_0.6 pMODFETs with peak extrinsic transconductance (g_mext) values as high as 488 mS/mm at room temperature. These devices also displayed a unity current gain cutoff frequency (f_T) of 42 GHz and maximum frequency of oscillation (f_max) of 86 GHz. We have also investigated the performance of Si_0.2Ge_0.8/Si_0.7Ge_0.3 pMODFETs on silicon-on-sapphire (SOS) substrates. These devices exhibited dc transconductances as high as g_next = 377 mS/mm, and had values of f_T = 49 GHz and f_max = 95 GHz. The first high-frequency noise characterization of SiGe MODFETs has also been performed. Si_0.2Ge_0.8/Si_0.65Ge_0.35 pMODFETs grown on high-ρ Si substrates produced minimum noise figures of 1.1 dB (2.9 dB) with an associated gain (G_a) of 18 dB (7.6 dB) at 3 GHz (18 GHz).

Original language	English (US)
Title of host publication	Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO
Publisher	IEEE
Pages	27-32
Number of pages	6
State	Published - Dec 1 1999
Event	7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99) - London, UK Duration: Nov 22 1999 → Nov 23 1999

Other

Other	7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99)
City	London, UK
Period	11/22/99 → 11/23/99

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Koester, SJ, Hammond, R, Chu, JO, Ott, JA, Mooney, PM, Perraud, L & Jenkins, KA 1999, High-performance SiGe pMODFETs grown by UHV-CVD. in Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO. IEEE, pp. 27-32, 7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99), London, UK, 11/22/99.

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abstract = "The fabrication and characterization of 0.1 μm-gate-length SiGe pMODFETs fabricated on UHV-CVD-grown heterostructures with various novel layer structure configurations are reported. We have fabricated Ge/Si0.4Ge0.6 pMODFETs with peak extrinsic transconductance (gmext) values as high as 488 mS/mm at room temperature. These devices also displayed a unity current gain cutoff frequency (fT) of 42 GHz and maximum frequency of oscillation (fmax) of 86 GHz. We have also investigated the performance of Si0.2Ge0.8/Si0.7Ge0.3 pMODFETs on silicon-on-sapphire (SOS) substrates. These devices exhibited dc transconductances as high as gnext = 377 mS/mm, and had values of fT = 49 GHz and fmax = 95 GHz. The first high-frequency noise characterization of SiGe MODFETs has also been performed. Si0.2Ge0.8/Si0.65Ge0.35 pMODFETs grown on high-ρ Si substrates produced minimum noise figures of 1.1 dB (2.9 dB) with an associated gain (Ga) of 18 dB (7.6 dB) at 3 GHz (18 GHz).",

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AU - Koester, S. J.

AU - Hammond, R.

AU - Chu, J. O.

AU - Ott, J. A.

AU - Mooney, P. M.

AU - Perraud, L.

AU - Jenkins, K. A.

PY - 1999/12/1

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N2 - The fabrication and characterization of 0.1 μm-gate-length SiGe pMODFETs fabricated on UHV-CVD-grown heterostructures with various novel layer structure configurations are reported. We have fabricated Ge/Si0.4Ge0.6 pMODFETs with peak extrinsic transconductance (gmext) values as high as 488 mS/mm at room temperature. These devices also displayed a unity current gain cutoff frequency (fT) of 42 GHz and maximum frequency of oscillation (fmax) of 86 GHz. We have also investigated the performance of Si0.2Ge0.8/Si0.7Ge0.3 pMODFETs on silicon-on-sapphire (SOS) substrates. These devices exhibited dc transconductances as high as gnext = 377 mS/mm, and had values of fT = 49 GHz and fmax = 95 GHz. The first high-frequency noise characterization of SiGe MODFETs has also been performed. Si0.2Ge0.8/Si0.65Ge0.35 pMODFETs grown on high-ρ Si substrates produced minimum noise figures of 1.1 dB (2.9 dB) with an associated gain (Ga) of 18 dB (7.6 dB) at 3 GHz (18 GHz).

AB - The fabrication and characterization of 0.1 μm-gate-length SiGe pMODFETs fabricated on UHV-CVD-grown heterostructures with various novel layer structure configurations are reported. We have fabricated Ge/Si0.4Ge0.6 pMODFETs with peak extrinsic transconductance (gmext) values as high as 488 mS/mm at room temperature. These devices also displayed a unity current gain cutoff frequency (fT) of 42 GHz and maximum frequency of oscillation (fmax) of 86 GHz. We have also investigated the performance of Si0.2Ge0.8/Si0.7Ge0.3 pMODFETs on silicon-on-sapphire (SOS) substrates. These devices exhibited dc transconductances as high as gnext = 377 mS/mm, and had values of fT = 49 GHz and fmax = 95 GHz. The first high-frequency noise characterization of SiGe MODFETs has also been performed. Si0.2Ge0.8/Si0.65Ge0.35 pMODFETs grown on high-ρ Si substrates produced minimum noise figures of 1.1 dB (2.9 dB) with an associated gain (Ga) of 18 dB (7.6 dB) at 3 GHz (18 GHz).

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ER -

High-performance SiGe pMODFETs grown by UHV-CVD

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