High permittivity gate insulators TiO2 and ZrO2

B. He, N. Hoilien, R. Smith, T. Ma, C. Taylor, I. St Omer, S. A. Campbell, W. L. Gladfelter, M. Gribelyuk, D. Buchanan

Research output: Chapter in Book/Report/Conference proceedingChapter

5 Scopus citations

Abstract

Polycrystalline films of TiO2 and ZrO2 have been deposited from their respective tetranitrate precursors. Film microstructure has been examined. The leakage current depends on the process conditions, and particularly on a post deposition hydrogen anneal. An interfacial layer leads to a lower than expected capacitance. This layer is believed to be due to silicon oxidation in ZrO2 and silicate formation in TiO2.

Original languageEnglish (US)
Title of host publicationBiennial University/Government/Industry Microelectronics Symposium - Proceedings
PublisherIEEE
Pages33-36
Number of pages4
StatePublished - 1999
EventProceedings of the 1999 13th Biennial University / Goverment / Industry Microelectronics Symposium (UGIM) - Minneapolis, MN, USA
Duration: Jun 20 1999Jun 23 1999

Other

OtherProceedings of the 1999 13th Biennial University / Goverment / Industry Microelectronics Symposium (UGIM)
CityMinneapolis, MN, USA
Period6/20/996/23/99

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