Abstract
Polycrystalline films of TiO2 and ZrO2 have been deposited from their respective tetranitrate precursors. Film microstructure has been examined. The leakage current depends on the process conditions, and particularly on a post deposition hydrogen anneal. An interfacial layer leads to a lower than expected capacitance. This layer is believed to be due to silicon oxidation in ZrO2 and silicate formation in TiO2.
Original language | English (US) |
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Title of host publication | Biennial University/Government/Industry Microelectronics Symposium - Proceedings |
Publisher | IEEE |
Pages | 33-36 |
Number of pages | 4 |
State | Published - 1999 |
Event | Proceedings of the 1999 13th Biennial University / Goverment / Industry Microelectronics Symposium (UGIM) - Minneapolis, MN, USA Duration: Jun 20 1999 → Jun 23 1999 |
Other
Other | Proceedings of the 1999 13th Biennial University / Goverment / Industry Microelectronics Symposium (UGIM) |
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City | Minneapolis, MN, USA |
Period | 6/20/99 → 6/23/99 |