High-speed Germanium-on-SOI lateral PIN photodiodes

G. Dehlinger; S. J. Koester; J. D. Schaub; J. O. Chu; Q. C. Ouyang; A. Grill

doi:10.1109/LPT.2004.835631

High-speed Germanium-on-SOI lateral PIN photodiodes

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, A. Grill

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

158 Scopus citations

Abstract

We report the fabrication and characterization of high-speed germanium on silicon-on-insulator lateral PIN photodetectors. At an incident wavelength of 850 nm, 10 × 10-μm detectors with finger spacing S of 0.4 μm (0.6 μm) produced a - 3-dB bandwidth of 29 GHz (27 GHz at a bias voltage of - 1 V. The detectors with S = 0.6 μm had external quantum efficiency of 34% at 850 nm and 46% at 900 nm and dark current of 0.02 μA at - 1-V bias.

Original language	English (US)
Pages (from-to)	2547-2549
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	11
DOIs	https://doi.org/10.1109/LPT.2004.835631
State	Published - Nov 2004

Access

10.1109/LPT.2004.835631

OpenUrl availability

Full text

Cite this

@article{81ef45280a2348099449244d5e3a66e6,

title = "High-speed Germanium-on-SOI lateral PIN photodiodes",

abstract = "We report the fabrication and characterization of high-speed germanium on silicon-on-insulator lateral PIN photodetectors. At an incident wavelength of 850 nm, 10 × 10-μm detectors with finger spacing S of 0.4 μm (0.6 μm) produced a - 3-dB bandwidth of 29 GHz (27 GHz at a bias voltage of - 1 V. The detectors with S = 0.6 μm had external quantum efficiency of 34% at 850 nm and 46% at 900 nm and dark current of 0.02 μA at - 1-V bias.",

author = "G. Dehlinger and Koester, {S. J.} and Schaub, {J. D.} and Chu, {J. O.} and Ouyang, {Q. C.} and A. Grill",

year = "2004",

month = nov,

doi = "10.1109/LPT.2004.835631",

language = "English (US)",

volume = "16",

pages = "2547--2549",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - High-speed Germanium-on-SOI lateral PIN photodiodes

AU - Dehlinger, G.

AU - Koester, S. J.

AU - Schaub, J. D.

AU - Chu, J. O.

AU - Ouyang, Q. C.

AU - Grill, A.

PY - 2004/11

Y1 - 2004/11

N2 - We report the fabrication and characterization of high-speed germanium on silicon-on-insulator lateral PIN photodetectors. At an incident wavelength of 850 nm, 10 × 10-μm detectors with finger spacing S of 0.4 μm (0.6 μm) produced a - 3-dB bandwidth of 29 GHz (27 GHz at a bias voltage of - 1 V. The detectors with S = 0.6 μm had external quantum efficiency of 34% at 850 nm and 46% at 900 nm and dark current of 0.02 μA at - 1-V bias.

AB - We report the fabrication and characterization of high-speed germanium on silicon-on-insulator lateral PIN photodetectors. At an incident wavelength of 850 nm, 10 × 10-μm detectors with finger spacing S of 0.4 μm (0.6 μm) produced a - 3-dB bandwidth of 29 GHz (27 GHz at a bias voltage of - 1 V. The detectors with S = 0.6 μm had external quantum efficiency of 34% at 850 nm and 46% at 900 nm and dark current of 0.02 μA at - 1-V bias.

UR - http://www.scopus.com/inward/record.url?scp=7744243121&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=7744243121&partnerID=8YFLogxK

U2 - 10.1109/LPT.2004.835631

DO - 10.1109/LPT.2004.835631

M3 - Article

AN - SCOPUS:7744243121

SN - 1041-1135

VL - 16

SP - 2547

EP - 2549

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 11

ER -

High-speed Germanium-on-SOI lateral PIN photodiodes

Abstract

Access

OpenUrl availability

Other files and links

Fingerprint

Cite this