High temperature polyimide containing anthracene moiety and its structure, interface, and nonvolatile memory behavior

Samdae Park, Kyungtae Kim, Dong Min Kim, Wonsang Kwon, Junman Choi, Moonhor Ree

Research output: Contribution to journalArticlepeer-review

65 Scopus citations

Abstract

A high temperature polyimide bearing anthracene moieties, poly(3,3′-di(9-anthracenemethoxy)-4,4′-biphenylene hexafluoroisopropylidenediphthalimide) (6F-HAB-AM PI) was synthesized. The polymer exhibits excellent thermal stability up to around 410 °C. This polymer is amorphous but orients preferentially in the plane of nanoscale thin films. In device fabrications of its nanoscale thin films with metal top and bottom electrodes, no diffusion of the metal atoms or ions between the polymer and electrodes was found; however, the aluminum bottom electrode had somewhat undergone oxide layer (about 1.2 nm thick) formation at the surface during the post polymer layer formation process, which was confirmed to have no significant influence on the device performance. The polymer thin film exhibited excellent unipolar and bipolar switching behaviors over a very small voltage range, less than ±2 V. Further, the PI films show repeatable writing, reading, and erasing ability with long reliability and high ON/OFF current ratio (up to 107) in air ambient conditions as well as even at temperatures up to 200 °C.

Original languageEnglish (US)
Pages (from-to)765-773
Number of pages9
JournalACS Applied Materials and Interfaces
Volume3
Issue number3
DOIs
StatePublished - Mar 23 2011

Keywords

  • amorphous
  • anthracene moiety
  • bipolar switching
  • high temperature polyimide
  • in-plane orientation
  • local filament formation
  • nanoscale thin film
  • nonvolatile polymer memory
  • space-charge-limited current
  • unipolar switching

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