B. L. Gel'mont, A. R. Gadzhiev, B. I. Shklovskii, I. S. Shlimak, A. L. Efros

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A theoretical and experimental investigation was made of the influence of fluctuations of the solid-solution composition of the hopping conduction. The experiments were carried out on gallium-doped Ge//1// minus //xSi//x solid solutions with 0 less than x less than equivalent to 0. 06. The dependence of the activation energy of hopping conduction on x is explained by two mechanisms which give rise to a scatter of levels. One of them associated with large-scale fluctuations of the value of x in the bulk of the sample and the other is due to fluctuations of the central cell potential.

Original languageEnglish (US)
Pages (from-to)1549-1553
Number of pages5
JournalSov Phys Semicond
Issue number12
StatePublished - Jan 1 1975

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