Hopping transport in -doping layers in GaAs

Qiu Yi Ye, B. I. Shklovskii, A. Zrenner, F. Koch, K. Ploog

Research output: Contribution to journalArticlepeer-review

66 Scopus citations

Abstract

We consider hopping transport in a dilutely doped sheet of Si donors in GaAs. Samples are constructed as multiple layers, spaced significantly farther apart than the average, in-plane donor separation. In this system we have determined activation energies and studied the positive magnetoresistance effect quantitatively. We provide a detailed examination of the negative- magnetoresistance effect that stems from quantum interference of neighboring hopping paths.

Original languageEnglish (US)
Pages (from-to)8477-8484
Number of pages8
JournalPhysical Review B
Volume41
Issue number12
DOIs
StatePublished - 1990
Externally publishedYes

Bibliographical note

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Copyright 2015 Elsevier B.V., All rights reserved.

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