Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO₃

Owing to its high roomerature electron mobility and wide bandgap, BaSnO₃ has recently become of significant interest for potential roomerature oxide electronics. A hybrid molecular beam epitaxy (MBE) approach for the growth of high-quality BaSnO₃ films is developed in this work. This approach employs hexamethylditin as a chemical precursor for tin, an effusion cell for barium, and a radio frequency plasma source for oxygen. BaSnO₃ films were thus grown on SrTiO₃ (001) and LaAlO₃ (001) substrates. Growth conditions for stoichiometric BaSnO₃ were identified. Reflection high-energy electron diffraction (RHEED) intensity oscillations, characteristic of a layer-by-layer growth mode were observed. A critical thickness of ∼1nm for strain relaxation was determined for films grown on SrTiO₃ using in situ RHEED. Scanning transmission electron microscopy combined with electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy confirmed the cube-on-cube epitaxy and composition. The importance of precursor chemistry is discussed in the context of the MBE growth of BaSnO₃.