Abstract
We report results of electrical output and transfer characteristics for two top-contact pentacene thin-film transistors under hydrostatic pressure at room temperature. Strong reversible increases of the drain current and the field-effect hole mobility with increasing pressure were observed, in particular for a device with relatively low current at atmospheric pressure.
Original language | English (US) |
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Pages (from-to) | 5760-5762 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 85 |
Issue number | 23 |
DOIs | |
State | Published - Dec 6 2004 |
Bibliographical note
Funding Information:This work was supported primarily by the MRSEC Program of the National Science Foundation under Award No. DMR-0212302.