Hydrostatic pressure effects on poly(3-hexylthiophene) thin film transistors

Dominic D. Schroepfer, P. Paul Ruden, Yu Xia, C. Daniel Frisbie, Sean E. Shaheen

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Abstract

Poly(3-hexylthiophene) thin-film transistors are subjected to hydrostatic pressure up to 1 GPa. The charge carrier mobility and threshold voltage are extracted from Id - Vgs curves. These parameters change linearly with pressure and retrace upon gradual pressure release. The mobility increases from 0.001 to 0.004 cm2 V s, and the threshold voltage falls from 36 to 2 V over the full pressure range. As a result, the current rises with increasing pressure up to 600 MPa and then falls as pressure is increased further. The increase in the mobility is attributed to enhanced π -orbital overlap under compression. The change in threshold voltage is interpreted as a modulation of trapped charge density.

Original languageEnglish (US)
Article number013305
JournalApplied Physics Letters
Volume92
Issue number1
DOIs
StatePublished - 2008

Bibliographical note

Funding Information:
This work was supported primarily by the MRSEC Program of the National Science Foundation under Award No. DMR-0212302.

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