Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation

Valerio Di Lecce; Roberto Grassi; Antonio Gnudi; Elena Gnani; Susanna Reggiani; Giorgio Baccarani

doi:10.1109/ESSDERC.2014.6948823

Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation

Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

The influence of the crystal orientation on the performance of silicon-based Graphene-Base Heterojunction Transistors (GBHTs) for terahertz operation is investigated by means of an in-house developed simulator based on quantum transport coupled with Poisson equation. The effect of impurity scattering is included, finding that terahertz operation is possible even considering the reduction of the mobility due to dopants.

Original language	English (US)
Title of host publication	European Solid-State Device Research Conference
Editors	Roberto Bez, Gaudenzio Meneghesso, Paolo Pavan
Publisher	IEEE Computer Society
Pages	313-316
Number of pages	4
ISBN (Electronic)	9781479943784
DOIs	https://doi.org/10.1109/ESSDERC.2014.6948823
State	Published - Nov 5 2014
Event	44th European Solid-State Device Research Conference, ESSDERC 2014 - Venezia Lido, Italy Duration: Sep 22 2014 → Sep 26 2014

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	44th European Solid-State Device Research Conference, ESSDERC 2014
Country	Italy
City	Venezia Lido
Period	9/22/14 → 9/26/14

Access

10.1109/ESSDERC.2014.6948823

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Cite this

Di Lecce, V., Grassi, R., Gnudi, A., Gnani, E., Reggiani, S., & Baccarani, G. (2014). Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. In R. Bez, G. Meneghesso, & P. Pavan (Eds.), European Solid-State Device Research Conference (pp. 313-316). [6948823] (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2014.6948823

Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. / Di Lecce, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio.

European Solid-State Device Research Conference. ed. / Roberto Bez; Gaudenzio Meneghesso; Paolo Pavan. IEEE Computer Society, 2014. p. 313-316 6948823 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Di Lecce, V, Grassi, R, Gnudi, A, Gnani, E, Reggiani, S & Baccarani, G 2014, Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. in R Bez, G Meneghesso & P Pavan (eds), European Solid-State Device Research Conference., 6948823, European Solid-State Device Research Conference, IEEE Computer Society, pp. 313-316, 44th European Solid-State Device Research Conference, ESSDERC 2014, Venezia Lido, Italy, 9/22/14. https://doi.org/10.1109/ESSDERC.2014.6948823

Di Lecce V, Grassi R, Gnudi A, Gnani E, Reggiani S, Baccarani G. Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. In Bez R, Meneghesso G, Pavan P, editors, European Solid-State Device Research Conference. IEEE Computer Society. 2014. p. 313-316. 6948823. (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2014.6948823

Di Lecce, Valerio ; Grassi, Roberto ; Gnudi, Antonio ; Gnani, Elena ; Reggiani, Susanna ; Baccarani, Giorgio. / Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. European Solid-State Device Research Conference. editor / Roberto Bez ; Gaudenzio Meneghesso ; Paolo Pavan. IEEE Computer Society, 2014. pp. 313-316 (European Solid-State Device Research Conference).

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