Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation

Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The influence of the crystal orientation on the performance of silicon-based Graphene-Base Heterojunction Transistors (GBHTs) for terahertz operation is investigated by means of an in-house developed simulator based on quantum transport coupled with Poisson equation. The effect of impurity scattering is included, finding that terahertz operation is possible even considering the reduction of the mobility due to dopants.

Original languageEnglish (US)
Title of host publicationEuropean Solid-State Device Research Conference
EditorsRoberto Bez, Gaudenzio Meneghesso, Paolo Pavan
PublisherIEEE Computer Society
Pages313-316
Number of pages4
ISBN (Electronic)9781479943784
DOIs
StatePublished - Nov 5 2014
Event44th European Solid-State Device Research Conference, ESSDERC 2014 - Venezia Lido, Italy
Duration: Sep 22 2014Sep 26 2014

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other44th European Solid-State Device Research Conference, ESSDERC 2014
CountryItaly
CityVenezia Lido
Period9/22/149/26/14

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