Impact of metal gate work function on nano CMOS device performance

Y. T. Hou; Tony Low; Bin Xu; Ming Fu Li; G. Samudra; D. L. Kwong

Impact of metal gate work function on nano CMOS device performance

Y. T. Hou, Tony Low, Bin Xu, Ming Fu Li, G. Samudra, D. L. Kwong

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

We studied two effects in the metal gate work function engineering in nano CMOSFETs: (1) Gate work function shifts induced by carrier quantization in Si and Ge ultra-thin body FETs with sub-10 nm body thickness and different surface orientations. Guidelines for metal gate work function engineering are provided and technical challenges identified; (2) We presented a systematic study on gate tunneling characteristics of metal gate CMOSFETs. A reduction of gate to source/drain extension tunneling is found when using near mid-gap metal gate in SOI CMOS, especially when using high-K dielectric. Benefits of this reduction to transistor off-state leakage and to future CMOS scaling were analyzed.

Original language	English (US)
Title of host publication	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Editors	R. Huang, M. Yu, J.J. Liou, T. Hiramito, C. Claeys
Pages	57-60
Number of pages	4
Volume	1
State	Published - Dec 1 2004
Event	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: Oct 18 2004 → Oct 21 2004

Other

Other	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country/Territory	China
City	Beijing
Period	10/18/04 → 10/21/04

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Impact of metal gate work function on nano CMOS device performance. / Hou, Y. T.; Low, Tony; Xu, Bin et al.
2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004. ed. / R. Huang; M. Yu; J.J. Liou; T. Hiramito; C. Claeys. Vol. 1 2004. p. 57-60 A1.8.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hou, YT, Low, T, Xu, B, Li, MF, Samudra, G & Kwong, DL 2004, Impact of metal gate work function on nano CMOS device performance. in R Huang, M Yu, JJ Liou, T Hiramito & C Claeys (eds), 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004. vol. 1, A1.8, pp. 57-60, 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China, 10/18/04.

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N2 - We studied two effects in the metal gate work function engineering in nano CMOSFETs: (1) Gate work function shifts induced by carrier quantization in Si and Ge ultra-thin body FETs with sub-10 nm body thickness and different surface orientations. Guidelines for metal gate work function engineering are provided and technical challenges identified; (2) We presented a systematic study on gate tunneling characteristics of metal gate CMOSFETs. A reduction of gate to source/drain extension tunneling is found when using near mid-gap metal gate in SOI CMOS, especially when using high-K dielectric. Benefits of this reduction to transistor off-state leakage and to future CMOS scaling were analyzed.

AB - We studied two effects in the metal gate work function engineering in nano CMOSFETs: (1) Gate work function shifts induced by carrier quantization in Si and Ge ultra-thin body FETs with sub-10 nm body thickness and different surface orientations. Guidelines for metal gate work function engineering are provided and technical challenges identified; (2) We presented a systematic study on gate tunneling characteristics of metal gate CMOSFETs. A reduction of gate to source/drain extension tunneling is found when using near mid-gap metal gate in SOI CMOS, especially when using high-K dielectric. Benefits of this reduction to transistor off-state leakage and to future CMOS scaling were analyzed.

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Impact of metal gate work function on nano CMOS device performance

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