Impact of surface roughness on silicon and Germanium ultra-thin-body MOSFETs

Physics & Astronomy

• thin bodies 100%
• germanium 60%
• surface roughness 57%
• field effect transistors 53%
• shift 41%
• silicon 36%
• hole mobility 25%
• SOI (semiconductors) 25%
• electron mobility 23%
• threshold voltage 21%
• CMOS 20%
• energy levels 18%
• degradation 17%
• scaling 15%
• requirements 15%
• anisotropy 14%
• approximation 11%
• metals 11%

Engineering & Materials Science

• Germanium 91%
• Surface roughness 56%
• Silicon 53%
• Hole mobility 37%
• Electron energy levels 26%
• Threshold voltage 25%
• Anisotropy 23%
• Degradation 15%
• Metals 14%

Chemical Compounds

• Surface Roughness 68%
• Compound Mobility 34%
• Electron Mobility 27%
• Hole Mobility 27%
• Surface 21%
• Anisotropy 21%
• Voltage 16%
• Energy 10%
• Metal 10%