Improved crystal quality of a-plane GaN with high- temperature 3-dimensional GaN buffer layers deposited by using metal-organic chemical vapor deposition

Sung Hyun Park, Daeyoung Moon, Bumho Kim, Kisu Joo, Duck Jae You, Dong Uk Kim, Hojun Chang, Heonsu Jeon, Yasushi Nanishi, Euijoon Yoon

Research output: Contribution to journalArticlepeer-review

Abstract

a-plane GaN on r-plane sapphire substrates suffers from high density defects and rough surfaces. To obtain pit-free a-plane GaN by metal-organic chemical vapor deposition, we intentionally grew high-temperature (HT) 3-dimensional (3D) GaN buffer layers on a GaN nucleation layer. The effects of the HT 3D GaN buffer layers on crystal quality and the surface morphology of a-plane GaN were studied. The insertion of a 3D GaN buffer layer with an optimum thickness was found to be an effective method to obtain pit-free a-plane GaN with improved crystalline quality on r-plane sapphire substrates. An a-plane GaN light emitting diode (LED) at an emission wavelength around 480 nm with negligible peak shift was successfully fabricated.

Original languageEnglish (US)
Pages (from-to)1297-1300
Number of pages4
JournalJournal of the Korean Physical Society
Volume60
Issue number8
DOIs
StatePublished - 2012

Bibliographical note

Funding Information:
This work was supported by the Brain Korea 21 (BK21) program, World Class University (WCU) program (R31-2008-000-10075-0) of the Ministry of Education of Korea, and the Technology Innovation Program (Industrial Strategic technology development program, 10035430, Development of high efficiency light emitting diode for illumination) funded by the Ministry of Knowledge Economy (MKE, Korea).

Keywords

  • Buffer
  • Light-emitting diode
  • MOCVD
  • Nonpolar
  • a-plane GaN
  • r-plane sapphire

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