Improvement in the properties of CZTSSe thin films by selenizing single-step electrodeposited CZTS thin films

K. V. Gurav; S. W. Shin; U. M. Patil; M. P. Suryawanshi; S. M. Pawar; M. G. Gang; S. A. Vanalakar; J. H. Yun; J. H. Kim

doi:10.1016/j.jallcom.2014.12.253

Improvement in the properties of CZTSSe thin films by selenizing single-step electrodeposited CZTS thin films

K. V. Gurav, S. W. Shin, U. M. Patil, M. P. Suryawanshi, S. M. Pawar, M. G. Gang, S. A. Vanalakar, J. H. Yun, J. H. Kim

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

Cu₂ZnSn(S_xSe_1-x)₄ (CZTSSe) thin films are prepared by selenizing a single-step electrodeposited Cu-Zn-Sn-S precursor. The effect of the selenium (Se) vaporization temperature on the properties of CZTSSe thin films is systematically investigated. The position of the (1 1 2) peak is systematically shifted to lower 2θ values when the Se vaporization temperature increases. The Raman spectra of CZTSSe films show bimodal behavior. The microstructure and film thickness significantly improve with increasing Se vaporization temperature. The increased Se incorporation in CZTSSe films with the increase of the Se vaporization temperature is demonstrated using a compositional analysis. The band gap energy of CZTSSe thin films is tuned in the range of 1.40-1.08 eV by varying the Se vaporization temperature.

Original language	English (US)
Pages (from-to)	178-182
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	631
DOIs	https://doi.org/10.1016/j.jallcom.2014.12.253
State	Published - May 15 2015

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Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Keywords

CuZnSn(S,Se) (CZTSSe) thin films
CuZnSnS (CZTS) thin films
Single-step electrodeposition
Thin-film solar cells

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title = "Improvement in the properties of CZTSSe thin films by selenizing single-step electrodeposited CZTS thin films",

abstract = "Cu2ZnSn(SxSe1-x)4 (CZTSSe) thin films are prepared by selenizing a single-step electrodeposited Cu-Zn-Sn-S precursor. The effect of the selenium (Se) vaporization temperature on the properties of CZTSSe thin films is systematically investigated. The position of the (1 1 2) peak is systematically shifted to lower 2θ values when the Se vaporization temperature increases. The Raman spectra of CZTSSe films show bimodal behavior. The microstructure and film thickness significantly improve with increasing Se vaporization temperature. The increased Se incorporation in CZTSSe films with the increase of the Se vaporization temperature is demonstrated using a compositional analysis. The band gap energy of CZTSSe thin films is tuned in the range of 1.40-1.08 eV by varying the Se vaporization temperature.",

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AU - Gurav, K. V.

AU - Shin, S. W.

AU - Patil, U. M.

AU - Suryawanshi, M. P.

AU - Pawar, S. M.

AU - Gang, M. G.

AU - Vanalakar, S. A.

AU - Yun, J. H.

AU - Kim, J. H.

PY - 2015/5/15

Y1 - 2015/5/15

N2 - Cu2ZnSn(SxSe1-x)4 (CZTSSe) thin films are prepared by selenizing a single-step electrodeposited Cu-Zn-Sn-S precursor. The effect of the selenium (Se) vaporization temperature on the properties of CZTSSe thin films is systematically investigated. The position of the (1 1 2) peak is systematically shifted to lower 2θ values when the Se vaporization temperature increases. The Raman spectra of CZTSSe films show bimodal behavior. The microstructure and film thickness significantly improve with increasing Se vaporization temperature. The increased Se incorporation in CZTSSe films with the increase of the Se vaporization temperature is demonstrated using a compositional analysis. The band gap energy of CZTSSe thin films is tuned in the range of 1.40-1.08 eV by varying the Se vaporization temperature.

AB - Cu2ZnSn(SxSe1-x)4 (CZTSSe) thin films are prepared by selenizing a single-step electrodeposited Cu-Zn-Sn-S precursor. The effect of the selenium (Se) vaporization temperature on the properties of CZTSSe thin films is systematically investigated. The position of the (1 1 2) peak is systematically shifted to lower 2θ values when the Se vaporization temperature increases. The Raman spectra of CZTSSe films show bimodal behavior. The microstructure and film thickness significantly improve with increasing Se vaporization temperature. The increased Se incorporation in CZTSSe films with the increase of the Se vaporization temperature is demonstrated using a compositional analysis. The band gap energy of CZTSSe thin films is tuned in the range of 1.40-1.08 eV by varying the Se vaporization temperature.

KW - CuZnSn(S,Se) (CZTSSe) thin films

KW - CuZnSnS (CZTS) thin films

KW - Single-step electrodeposition

KW - Thin-film solar cells

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Improvement in the properties of CZTSSe thin films by selenizing single-step electrodeposited CZTS thin films

Abstract

Bibliographical note

Keywords

UN SDGs

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