In-flight dry etching of plasma-synthesized silicon nanocrystals

X. D. Pi; R. W. Liptak; S. A. Campbell; U. Kortshagen

doi:10.1063/1.2773931

In-flight dry etching of plasma-synthesized silicon nanocrystals

X. D. Pi, R. W. Liptak, S. A. Campbell, U. Kortshagen

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Abstract

C F4 -based plasma has been employed to in-flight etch silicon nanocrystals (Si-NCs) after they are synthesized by Si H4 -based plasma. The authors find that the photoluminescence (PL) of Si-NCs blueshifts when they are etched, indicating the etching-induced size reduction of Si-NCs. It is demonstrated that the power of C F4 -based plasma can be tuned to control the size reduction of Si-NCs. The room-temperature atmospheric oxidation of both etched Si-NCs and unetched ones slows down significantly ∼100 h after production. The PL intensity of etched Si-NCs is smaller than that of unetched ones after oxidation.

Original language	English (US)
Article number	083112
Journal	Applied Physics Letters
Volume	91
Issue number	8
DOIs	https://doi.org/10.1063/1.2773931
State	Published - 2007

Bibliographical note

Funding Information:
This work was supported primarily by the MRSEC Program of the National Science Foundation under Award No. DMR-0212302, and partially by SPAWAR and NSF under Grant No. DMI-0556163. Portions of this work were carried out in the Characterization Facility which was partially supported through the NSF NNIN program.

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title = "In-flight dry etching of plasma-synthesized silicon nanocrystals",

abstract = "C F4 -based plasma has been employed to in-flight etch silicon nanocrystals (Si-NCs) after they are synthesized by Si H4 -based plasma. The authors find that the photoluminescence (PL) of Si-NCs blueshifts when they are etched, indicating the etching-induced size reduction of Si-NCs. It is demonstrated that the power of C F4 -based plasma can be tuned to control the size reduction of Si-NCs. The room-temperature atmospheric oxidation of both etched Si-NCs and unetched ones slows down significantly ∼100 h after production. The PL intensity of etched Si-NCs is smaller than that of unetched ones after oxidation.",

author = "Pi, {X. D.} and Liptak, {R. W.} and Campbell, {S. A.} and U. Kortshagen",

note = "Funding Information: This work was supported primarily by the MRSEC Program of the National Science Foundation under Award No. DMR-0212302, and partially by SPAWAR and NSF under Grant No. DMI-0556163. Portions of this work were carried out in the Characterization Facility which was partially supported through the NSF NNIN program. ",

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AU - Liptak, R. W.

AU - Campbell, S. A.

AU - Kortshagen, U.

N1 - Funding Information: This work was supported primarily by the MRSEC Program of the National Science Foundation under Award No. DMR-0212302, and partially by SPAWAR and NSF under Grant No. DMI-0556163. Portions of this work were carried out in the Characterization Facility which was partially supported through the NSF NNIN program.

PY - 2007

Y1 - 2007

N2 - C F4 -based plasma has been employed to in-flight etch silicon nanocrystals (Si-NCs) after they are synthesized by Si H4 -based plasma. The authors find that the photoluminescence (PL) of Si-NCs blueshifts when they are etched, indicating the etching-induced size reduction of Si-NCs. It is demonstrated that the power of C F4 -based plasma can be tuned to control the size reduction of Si-NCs. The room-temperature atmospheric oxidation of both etched Si-NCs and unetched ones slows down significantly ∼100 h after production. The PL intensity of etched Si-NCs is smaller than that of unetched ones after oxidation.

AB - C F4 -based plasma has been employed to in-flight etch silicon nanocrystals (Si-NCs) after they are synthesized by Si H4 -based plasma. The authors find that the photoluminescence (PL) of Si-NCs blueshifts when they are etched, indicating the etching-induced size reduction of Si-NCs. It is demonstrated that the power of C F4 -based plasma can be tuned to control the size reduction of Si-NCs. The room-temperature atmospheric oxidation of both etched Si-NCs and unetched ones slows down significantly ∼100 h after production. The PL intensity of etched Si-NCs is smaller than that of unetched ones after oxidation.

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In-flight dry etching of plasma-synthesized silicon nanocrystals

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