In-Plane 2H-1T′ MoTe2 Homojunctions Synthesized by Flux-Controlled Phase Engineering

Youngdong Yoo; Zachary P. Degregorio; Yang Su; Steven J. Koester; James E. Johns

doi:10.1002/adma.201605461

In-Plane 2H-1T′ MoTe₂ Homojunctions Synthesized by Flux-Controlled Phase Engineering

Youngdong Yoo, Zachary P. Degregorio, Yang Su, Steven J. Koester, James E. Johns

Research output: Contribution to journal › Article › peer-review

101 Scopus citations

Abstract

The fabrication of in-plane 2H-1T′ MoTe₂ homojunctions by the flux-controlled, phase-engineering of few-layer MoTe₂ from Mo nanoislands is reported. The phase of few-layer MoTe₂ is controlled by simply changing Te atomic flux controlled by the temperature of the reaction vessel. Few-layer 2H MoTe₂ is formed with high Te flux, while few-layer 1T′ MoTe₂ is obtained with low Te flux. With medium flux, few-layer in-plane 2H-1T′ MoTe₂ homojunctions are synthesized. As-synthesized MoTe₂ is characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. Kelvin probe force microscopy and Raman mapping confirm that in-plane 2H-1T′ MoTe₂ homojunctions have abrupt interfaces between 2H and 1T′ MoTe₂ domains, possessing a potential difference of about 100 mV. It is further shown that this method can be extended to create patterned metal–semiconductor junctions in MoTe₂ in a two-step lithographic synthesis. The flux-controlled phase engineering method could be utilized for the large-scale controlled fabrication of 2D metal–semiconductor junctions for next-generation electronic and optoelectronic devices.

Original language	English (US)
Article number	1605461
Journal	Advanced Materials
Volume	29
Issue number	16
DOIs	https://doi.org/10.1002/adma.201605461
State	Published - Apr 25 2017

Bibliographical note

Funding Information:
J.E.J. and Y.Y. acknowledge the donors of the American Chemical Society Petroleum Research Fund (55709-DNI5) for funding and support of this research. S.J.K. and Y.S. were supported by the Defense Threat Reduction Agency Basic Research Award no. HDTRA1-14-1-0042. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which has received capital equipment funding from the National Science Foundation through the MRSEC program under Award Number DMR-1420013.

Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

2D materials
Junctions
Metal-semiconductor
MoTe
TMDCs

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Journal Article

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10.1002/adma.201605461

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title = "In-Plane 2H-1T′ MoTe2 Homojunctions Synthesized by Flux-Controlled Phase Engineering",

abstract = "The fabrication of in-plane 2H-1T′ MoTe2 homojunctions by the flux-controlled, phase-engineering of few-layer MoTe2 from Mo nanoislands is reported. The phase of few-layer MoTe2 is controlled by simply changing Te atomic flux controlled by the temperature of the reaction vessel. Few-layer 2H MoTe2 is formed with high Te flux, while few-layer 1T′ MoTe2 is obtained with low Te flux. With medium flux, few-layer in-plane 2H-1T′ MoTe2 homojunctions are synthesized. As-synthesized MoTe2 is characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. Kelvin probe force microscopy and Raman mapping confirm that in-plane 2H-1T′ MoTe2 homojunctions have abrupt interfaces between 2H and 1T′ MoTe2 domains, possessing a potential difference of about 100 mV. It is further shown that this method can be extended to create patterned metal–semiconductor junctions in MoTe2 in a two-step lithographic synthesis. The flux-controlled phase engineering method could be utilized for the large-scale controlled fabrication of 2D metal–semiconductor junctions for next-generation electronic and optoelectronic devices.",

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AU - Johns, James E.

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N2 - The fabrication of in-plane 2H-1T′ MoTe2 homojunctions by the flux-controlled, phase-engineering of few-layer MoTe2 from Mo nanoislands is reported. The phase of few-layer MoTe2 is controlled by simply changing Te atomic flux controlled by the temperature of the reaction vessel. Few-layer 2H MoTe2 is formed with high Te flux, while few-layer 1T′ MoTe2 is obtained with low Te flux. With medium flux, few-layer in-plane 2H-1T′ MoTe2 homojunctions are synthesized. As-synthesized MoTe2 is characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. Kelvin probe force microscopy and Raman mapping confirm that in-plane 2H-1T′ MoTe2 homojunctions have abrupt interfaces between 2H and 1T′ MoTe2 domains, possessing a potential difference of about 100 mV. It is further shown that this method can be extended to create patterned metal–semiconductor junctions in MoTe2 in a two-step lithographic synthesis. The flux-controlled phase engineering method could be utilized for the large-scale controlled fabrication of 2D metal–semiconductor junctions for next-generation electronic and optoelectronic devices.

AB - The fabrication of in-plane 2H-1T′ MoTe2 homojunctions by the flux-controlled, phase-engineering of few-layer MoTe2 from Mo nanoislands is reported. The phase of few-layer MoTe2 is controlled by simply changing Te atomic flux controlled by the temperature of the reaction vessel. Few-layer 2H MoTe2 is formed with high Te flux, while few-layer 1T′ MoTe2 is obtained with low Te flux. With medium flux, few-layer in-plane 2H-1T′ MoTe2 homojunctions are synthesized. As-synthesized MoTe2 is characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. Kelvin probe force microscopy and Raman mapping confirm that in-plane 2H-1T′ MoTe2 homojunctions have abrupt interfaces between 2H and 1T′ MoTe2 domains, possessing a potential difference of about 100 mV. It is further shown that this method can be extended to create patterned metal–semiconductor junctions in MoTe2 in a two-step lithographic synthesis. The flux-controlled phase engineering method could be utilized for the large-scale controlled fabrication of 2D metal–semiconductor junctions for next-generation electronic and optoelectronic devices.

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In-Plane 2H-1T′ MoTe₂ Homojunctions Synthesized by Flux-Controlled Phase Engineering

Abstract

Bibliographical note

Keywords

How much support was provided by MRSEC?

Reporting period for MRSEC

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MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

Cite this

In-Plane 2H-1T′ MoTe2 Homojunctions Synthesized by Flux-Controlled Phase Engineering

Abstract

Bibliographical note

Keywords

How much support was provided by MRSEC?

Reporting period for MRSEC

PubMed: MeSH publication types

Access

OpenUrl availability

Other files and links

Fingerprint

Projects

MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

Cite this

In-Plane 2H-1T′ MoTe₂ Homojunctions Synthesized by Flux-Controlled Phase Engineering