In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method

A. K. Fung; J. D. Albrecht; M. I. Nathan; P. P. Ruden; H. Shtrikman

doi:10.1063/1.368552

In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method

A. K. Fung, J. D. Albrecht, M. I. Nathan, P. P. Ruden, H. Shtrikman

Electrical and Computer Engineering

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Abstract

Transmission line method patterns were fabricated on AlGaAs/GaAs heterostructures to measure the effect of uniaxial stress on the heterojunction two-dimensional electron gas resistivity and the contact resistance. Uniaxial compressive stress was applied in the [110] and [110] directions of heterojunctions fabricated on (001)-oriented GaAs substrates. Fitting the measured data to a lumped resistor model yielded normalized sheet resistivity stress coefficients of -3.2%/kbar and 12.6%/kbar for stress in the [110] and [110] directions, respectively. From these coefficients we obtain a value for the piezoelectric constant e₁₄ of Al_0.4Ga_0.6As to be -0.26 C/m², which when linearly extrapolated to AlAs gives -0.40 C/m² compared to the value -0.225 C/m² calculated by Hübner [Phys. Status Solidi B 57, 627 (1973)].

Original language	English (US)
Pages (from-to)	3741-3746
Number of pages	6
Journal	Journal of Applied Physics
Volume	84
Issue number	7
DOIs	https://doi.org/10.1063/1.368552
State	Published - Oct 1 1998

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title = "In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method",

abstract = "Transmission line method patterns were fabricated on AlGaAs/GaAs heterostructures to measure the effect of uniaxial stress on the heterojunction two-dimensional electron gas resistivity and the contact resistance. Uniaxial compressive stress was applied in the [110] and [110] directions of heterojunctions fabricated on (001)-oriented GaAs substrates. Fitting the measured data to a lumped resistor model yielded normalized sheet resistivity stress coefficients of -3.2%/kbar and 12.6%/kbar for stress in the [110] and [110] directions, respectively. From these coefficients we obtain a value for the piezoelectric constant e14 of Al0.4Ga0.6As to be -0.26 C/m2, which when linearly extrapolated to AlAs gives -0.40 C/m2 compared to the value -0.225 C/m2 calculated by H{\"u}bner [Phys. Status Solidi B 57, 627 (1973)].",

author = "Fung, {A. K.} and Albrecht, {J. D.} and Nathan, {M. I.} and Ruden, {P. P.} and H. Shtrikman",

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T1 - In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method

AU - Fung, A. K.

AU - Albrecht, J. D.

AU - Nathan, M. I.

AU - Ruden, P. P.

AU - Shtrikman, H.

PY - 1998/10/1

Y1 - 1998/10/1

N2 - Transmission line method patterns were fabricated on AlGaAs/GaAs heterostructures to measure the effect of uniaxial stress on the heterojunction two-dimensional electron gas resistivity and the contact resistance. Uniaxial compressive stress was applied in the [110] and [110] directions of heterojunctions fabricated on (001)-oriented GaAs substrates. Fitting the measured data to a lumped resistor model yielded normalized sheet resistivity stress coefficients of -3.2%/kbar and 12.6%/kbar for stress in the [110] and [110] directions, respectively. From these coefficients we obtain a value for the piezoelectric constant e14 of Al0.4Ga0.6As to be -0.26 C/m2, which when linearly extrapolated to AlAs gives -0.40 C/m2 compared to the value -0.225 C/m2 calculated by Hübner [Phys. Status Solidi B 57, 627 (1973)].

AB - Transmission line method patterns were fabricated on AlGaAs/GaAs heterostructures to measure the effect of uniaxial stress on the heterojunction two-dimensional electron gas resistivity and the contact resistance. Uniaxial compressive stress was applied in the [110] and [110] directions of heterojunctions fabricated on (001)-oriented GaAs substrates. Fitting the measured data to a lumped resistor model yielded normalized sheet resistivity stress coefficients of -3.2%/kbar and 12.6%/kbar for stress in the [110] and [110] directions, respectively. From these coefficients we obtain a value for the piezoelectric constant e14 of Al0.4Ga0.6As to be -0.26 C/m2, which when linearly extrapolated to AlAs gives -0.40 C/m2 compared to the value -0.225 C/m2 calculated by Hübner [Phys. Status Solidi B 57, 627 (1973)].

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In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method

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