In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

W. M M Kessels; Denise C. Marra; M. C M Van De Sanden; Eray S. Aydil

doi:10.1116/1.1469012

In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

W. M M Kessels, Denise C. Marra, M. C M Van De Sanden, Eray S. Aydil

Chemical Engineering and Materials Science

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Abstract

A recently developed method to determine the surface hydride composition on plasma deposited a-Si:H by means of in situ attenuated total reflection infrared spectroscopy was studied in detail. The determination of the surface composition in terms of mono-, di-, and trihydrides on the basis of data available for hydrogenated c-Si surfaces was addressed and the quantification of the hydrogen surface coverage by using data from ideally hydrogen terminated c-Si surfaces and from bulk a-Si:H was highlighted. In addition, the method of Ar ion bombardment was compared with other techniques using isotope substitution. The resulting data was analyzed in detail.

Original language	English (US)
Pages (from-to)	781-789
Number of pages	9
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1469012
State	Published - May 2002

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In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy. / Kessels, W. M M; Marra, Denise C.; Van De Sanden, M. C M et al.
In: Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, Vol. 20, No. 3, 05.2002, p. 781-789.

Research output: Contribution to journal › Article › peer-review

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In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

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