A recently developed method to determine the surface hydride composition on plasma deposited a-Si:H by means of in situ attenuated total reflection infrared spectroscopy was studied in detail. The determination of the surface composition in terms of mono-, di-, and trihydrides on the basis of data available for hydrogenated c-Si surfaces was addressed and the quantification of the hydrogen surface coverage by using data from ideally hydrogen terminated c-Si surfaces and from bulk a-Si:H was highlighted. In addition, the method of Ar ion bombardment was compared with other techniques using isotope substitution. The resulting data was analyzed in detail.
|Original language||English (US)|
|Number of pages||9|
|Journal||Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films|
|State||Published - May 2002|