InAs/SiGe on Si nanowire tunneling field effect transistors

C. Kshirsagar, S. J. Koester

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Tunneling field-effect transistors (TFETs) are of tremendous interest for advanced logic applications due to their potential for sub-60-mV/dec subthreshold slope which could enable supply voltage scaling beyond what is practical for conventional MOSFETs. However, TFETs based upon tunneling in Si suffer from low on current, ION, and fail to provide steep slope at high current levels. III-V TFETs are more promising due to their potential for high drive current, but the poor gate oxide quality remains a significant challenge. Recently, a hybrid III-V-on-Si approach [1] has been proposed as a potential solution to this problem, whereby the small effective band gap, E geff, of the InAs/Si heterojunction could increase ION, while preserving the high-quality Si/dielectric interface in the channel. Experimental demonstrations of nanostructured InAs-on-Si Esaki diodes and TFETs suggest this approach is feasible [1],[2]. However, InAs-on-Si heterostructures still exhibit relatively large Egeff (∼ 0.4 eV in unconfined geometries) and quantum effects increase Egeff substantially in confined geometries. In this paper, we provide a simulation analysis of a new device structure, the InAs/SiGe/Si TFET that could overcome this problem by utilizing a compressivelystrained SiGe layer to further decrease E geff. We show that ION in these devices increases by 5× (at constant Ioff) and further explore the various trade-offs and performance-limiting factors in these devices.

Original languageEnglish (US)
Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
Pages151-152
Number of pages2
DOIs
StatePublished - Dec 1 2011
Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
Duration: Jun 20 2011Jun 22 2011

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other69th Device Research Conference, DRC 2011
CountryUnited States
CitySanta Barbara, CA
Period6/20/116/22/11

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