Influence of deposition conditions on the 1/f noise in hydrogenated amorphous silicon

P. W. West, D. Quicker, H. M. Dyalsingh, James Kakalios

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

The electronic properties of a series of n-type doped hydrogenated amorphous silicon (a-Si:H) films grown with deposition rates ranging from 2 angstrom/s to 33 angstrom/s have been studied. Infrared absorption spectroscopy shows an increase in Si-H2 content with deposition rate, concurrent with a decreasing conductivity, increasing thermal equilibration relaxation time, and increasing disorder at the mobility edge as measured by the difference in thermopower and dark conductivity activation energies. The current 1/f noise properties become highly nonstationary, with increased variability and inapplicability of statistical analysis as the deposition rate increases.

Original languageEnglish (US)
Pages (from-to)215-220
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume467
StatePublished - Dec 1 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: Mar 31 1997Apr 4 1997

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