Influence of ion-beam sputtering deposition parameters on highly photosensitive and transparent CdZnO thin films

Shruti Verma; Sushil Kumar Pandey; Mukul Gupta; Shaibal Mukherjee

doi:10.1007/s10853-014-8396-8

Influence of ion-beam sputtering deposition parameters on highly photosensitive and transparent CdZnO thin films

Shruti Verma, Sushil Kumar Pandey, Mukul Gupta, Shaibal Mukherjee

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

CdZnO thin films with a nominal thickness of ~200 nm were grown on c-plane sapphire substrates by dual ion-beam sputtering deposition technique. The effect of substrate temperature (300-600 &Deg;C) and gas ambience on structural, morphological, compositional and opto-electronic properties was studied. X-ray diffraction patterns confirmed that all the films were polycrystalline in nature and were preferentially oriented along the c-axis. It was revealed that the films grown at Ar/O₂ ratio of 4:1 were structurally more ordered and the film quality was found to be the best at 500 &Deg;C. The compositional studies specify that approximately 11.8 at.% of cadmium were present in the film deposited at 300 &Deg;C in Ar-O₂ mixture. Investigations on optical properties by photoluminescence and absorption studies indicate band gap shrinkage with the increase in argon partial pressure and substrate temperature. It was found that photosensitivity of the deposited films was highly dependent on growth conditions. The photosensitivity was found to be 5000-fold higher for CdZnO film grown at 600 &Deg;C in Ar-O₂ ambience compared to the best reported result, and this was promising to realize high-performance opto-electronic devices on such CdZnO films.

Original language	English (US)
Pages (from-to)	6917-6929
Number of pages	13
Journal	Journal of Materials Science
Volume	49
Issue number	20
DOIs	https://doi.org/10.1007/s10853-014-8396-8
State	Published - Oct 2014

Bibliographical note

Funding Information:
Acknowledgements This work was partially supported by Department of Science and Technology (DST) Fast Track Scheme for Young Scientist No. SR/FTP/ETA-101/2010, DST Science and Engineering Research Board (SERB) Project No. SR/S3/EECE/0142/2011, and Council of Scientific and Industrial Research (CSIR) Project No. 22(0608)/12/EMR-II. We are also grateful to the AFM Facility equipped at Sophisticated Instrument Centre at IIT Indore and T. Shripathi and U. P. Deshpande, UGC-DAE Indore, for XPS Facility.

Funding Information:
M. Gupta University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore, India

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@article{287ec5c78fbb4fac9b79fe8149fd0faa,

title = "Influence of ion-beam sputtering deposition parameters on highly photosensitive and transparent CdZnO thin films",

abstract = "CdZnO thin films with a nominal thickness of ~200 nm were grown on c-plane sapphire substrates by dual ion-beam sputtering deposition technique. The effect of substrate temperature (300-600 &Deg;C) and gas ambience on structural, morphological, compositional and opto-electronic properties was studied. X-ray diffraction patterns confirmed that all the films were polycrystalline in nature and were preferentially oriented along the c-axis. It was revealed that the films grown at Ar/O2 ratio of 4:1 were structurally more ordered and the film quality was found to be the best at 500 &Deg;C. The compositional studies specify that approximately 11.8 at.% of cadmium were present in the film deposited at 300 &Deg;C in Ar-O2 mixture. Investigations on optical properties by photoluminescence and absorption studies indicate band gap shrinkage with the increase in argon partial pressure and substrate temperature. It was found that photosensitivity of the deposited films was highly dependent on growth conditions. The photosensitivity was found to be 5000-fold higher for CdZnO film grown at 600 &Deg;C in Ar-O2 ambience compared to the best reported result, and this was promising to realize high-performance opto-electronic devices on such CdZnO films.",

author = "Shruti Verma and Pandey, {Sushil Kumar} and Mukul Gupta and Shaibal Mukherjee",

note = "Funding Information: Acknowledgements This work was partially supported by Department of Science and Technology (DST) Fast Track Scheme for Young Scientist No. SR/FTP/ETA-101/2010, DST Science and Engineering Research Board (SERB) Project No. SR/S3/EECE/0142/2011, and Council of Scientific and Industrial Research (CSIR) Project No. 22(0608)/12/EMR-II. We are also grateful to the AFM Facility equipped at Sophisticated Instrument Centre at IIT Indore and T. Shripathi and U. P. Deshpande, UGC-DAE Indore, for XPS Facility. Funding Information: M. Gupta University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore, India",

year = "2014",

month = oct,

doi = "10.1007/s10853-014-8396-8",

language = "English (US)",

volume = "49",

pages = "6917--6929",

journal = "Journal of Materials Science",

issn = "0022-2461",

publisher = "Springer Netherlands",

number = "20",

}

TY - JOUR

T1 - Influence of ion-beam sputtering deposition parameters on highly photosensitive and transparent CdZnO thin films

AU - Verma, Shruti

AU - Pandey, Sushil Kumar

AU - Gupta, Mukul

AU - Mukherjee, Shaibal

N1 - Funding Information: Acknowledgements This work was partially supported by Department of Science and Technology (DST) Fast Track Scheme for Young Scientist No. SR/FTP/ETA-101/2010, DST Science and Engineering Research Board (SERB) Project No. SR/S3/EECE/0142/2011, and Council of Scientific and Industrial Research (CSIR) Project No. 22(0608)/12/EMR-II. We are also grateful to the AFM Facility equipped at Sophisticated Instrument Centre at IIT Indore and T. Shripathi and U. P. Deshpande, UGC-DAE Indore, for XPS Facility. Funding Information: M. Gupta University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore, India

PY - 2014/10

Y1 - 2014/10

N2 - CdZnO thin films with a nominal thickness of ~200 nm were grown on c-plane sapphire substrates by dual ion-beam sputtering deposition technique. The effect of substrate temperature (300-600 &Deg;C) and gas ambience on structural, morphological, compositional and opto-electronic properties was studied. X-ray diffraction patterns confirmed that all the films were polycrystalline in nature and were preferentially oriented along the c-axis. It was revealed that the films grown at Ar/O2 ratio of 4:1 were structurally more ordered and the film quality was found to be the best at 500 &Deg;C. The compositional studies specify that approximately 11.8 at.% of cadmium were present in the film deposited at 300 &Deg;C in Ar-O2 mixture. Investigations on optical properties by photoluminescence and absorption studies indicate band gap shrinkage with the increase in argon partial pressure and substrate temperature. It was found that photosensitivity of the deposited films was highly dependent on growth conditions. The photosensitivity was found to be 5000-fold higher for CdZnO film grown at 600 &Deg;C in Ar-O2 ambience compared to the best reported result, and this was promising to realize high-performance opto-electronic devices on such CdZnO films.

AB - CdZnO thin films with a nominal thickness of ~200 nm were grown on c-plane sapphire substrates by dual ion-beam sputtering deposition technique. The effect of substrate temperature (300-600 &Deg;C) and gas ambience on structural, morphological, compositional and opto-electronic properties was studied. X-ray diffraction patterns confirmed that all the films were polycrystalline in nature and were preferentially oriented along the c-axis. It was revealed that the films grown at Ar/O2 ratio of 4:1 were structurally more ordered and the film quality was found to be the best at 500 &Deg;C. The compositional studies specify that approximately 11.8 at.% of cadmium were present in the film deposited at 300 &Deg;C in Ar-O2 mixture. Investigations on optical properties by photoluminescence and absorption studies indicate band gap shrinkage with the increase in argon partial pressure and substrate temperature. It was found that photosensitivity of the deposited films was highly dependent on growth conditions. The photosensitivity was found to be 5000-fold higher for CdZnO film grown at 600 &Deg;C in Ar-O2 ambience compared to the best reported result, and this was promising to realize high-performance opto-electronic devices on such CdZnO films.

UR - http://www.scopus.com/inward/record.url?scp=84905663104&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905663104&partnerID=8YFLogxK

U2 - 10.1007/s10853-014-8396-8

DO - 10.1007/s10853-014-8396-8

M3 - Article

AN - SCOPUS:84905663104

SN - 0022-2461

VL - 49

SP - 6917

EP - 6929

JO - Journal of Materials Science

JF - Journal of Materials Science

IS - 20

ER -

Influence of ion-beam sputtering deposition parameters on highly photosensitive and transparent CdZnO thin films

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